Invention Grant
- Patent Title: Electrostatic discharge protection structure capable of preventing latch-up issue caused by unexpected noise
- Patent Title (中): 静电放电保护结构能够防止由意外的噪音引起的闩锁问题
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Application No.: US14177228Application Date: 2014-02-11
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Publication No.: US09263562B2Publication Date: 2016-02-16
- Inventor: Lu-An Chen , Ya-Ting Lin , Tien-Hao Tang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L29/74 ; H01L27/02 ; H01L29/08 ; H01L29/06
Abstract:
An electrostatic discharge protection structure includes a first well, a second well disposed in the first well, a first and a second doped region disposed in the first well, a third and a fourth doped region disposed in the second well, a first electrode electrically connected to the first doped region and the second doped region, and a second electrode electrically connected to the fourth doped region.
Public/Granted literature
Information query
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