公开(公告)号：US20180158902A1

公开(公告)日：2018-06-07

申请号：US15402204

申请日：2017-01-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hou-Jen Chiu ,  Ya-Ting Lin ,  Mei-Ling Chao ,  Tien-Hao Tang ,  Kuan-Cheng Su

IPC: H01L29/06 ,  H01L29/78

CPC classification number: H01L29/0638 ,  H01L29/0653 ,  H01L29/7851

Abstract: A semiconductor device comprises a fin shaped structure, a shallow trench isolation, a diffusion break structure and a gate electrode. The fin shaped structure is disposed on a substrate. The shallow trench isolation is disposed in the substrate and surrounds the fin shaped structure. The diffusion break structure is disposed in the fin shaped structure, and the gate electrode is disposed across the fin shaped structure.

公开(公告)号：US20160358904A1

公开(公告)日：2016-12-08

申请号：US14728053

申请日：2015-06-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ya-Ting Lin ,  Yi-Chun Chen ,  Tien-Hao Tang

IPC: H01L27/02

CPC classification number: H01L27/0274 ,  H01L27/0262 ,  H01L29/0692 ,  H01L29/861

Abstract: An electrostatic discharge (ESD) protection device includes a first trigger element and a first silicon control rectifier (SCR) element. The first trigger element has a first parasitic bipolar junction transistor (BJT) formed in a substrate. The first SCR element has a second parasitic BJT formed in the substrate. The first parasitic BJT and the second parasitic BJT has a common parasitic bipolar base, and the first parasitic BJT has a trigger voltage substantially lower than that of the second parasitic BJT.

Abstract translation: 静电放电（ESD）保护装置包括第一触发元件和第一硅控制整流器（SCR）元件。 第一触发元件具有形成在衬底中的第一寄生双极结型晶体管（BJT）。 第一SCR元件在衬底中形成第二寄生BJT。 第一寄生BJT和第二寄生BJT具有公共寄生双极基极，并且第一寄生BJT的触发电压基本上低于第二寄生BJT的触发电压。

公开(公告)号：US09640527B2

公开(公告)日：2017-05-02

申请号：US14728053

申请日：2015-06-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ya-Ting Lin ,  Yi-Chun Chen ,  Tien-Hao Tang

IPC: H01L21/8234 ,  H01L23/58 ,  H01L27/02

CPC classification number: H01L27/0274 ,  H01L27/0262 ,  H01L29/0692 ,  H01L29/861

Abstract: An electrostatic discharge (ESD) protection device includes a first trigger element and a first silicon control rectifier (SCR) element. The first trigger element has a first parasitic bipolar junction transistor (BJT) formed in a substrate. The first SCR element has a second parasitic BJT formed in the substrate. The first parasitic BJT and the second parasitic BJT has a common parasitic bipolar base, and the first parasitic BJT has a trigger voltage substantially lower than that of the second parasitic BJT.

公开(公告)号：US09443841B2

公开(公告)日：2016-09-13

申请号：US14986741

申请日：2016-01-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Lu-An Chen ,  Ya-Ting Lin ,  Tien-Hao Tang

IPC: H01L23/62 ,  H01L27/02 ,  H01L29/74 ,  H01L29/08 ,  H01L29/06 ,  H01L29/87 ,  H01L29/40

CPC classification number: H01L27/0262 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/402 ,  H01L29/7432 ,  H01L29/87

Abstract: An electrostatic discharge protection structure comprises an isolation layer, a high voltage P-well, an N-well, a P-well, a first doped region of N-type conductivity, a second doped region of P-type conductivity, a third doped region of N-type conductivity, a fourth doped region of P-type conductivity, an anode, and a cathode. The isolation layer is disposed on a substrate. The high voltage P-well is disposed on the isolation layer. The N-well is disposed in the high voltage P-well. The P-well is disposed in the high voltage P-well, and the P-well is separated from the N-well. The first and the second doped regions are disposed in the N-well. The third and the fourth doped regions are disposed in the P-well. The anode is electrically connected to the first doped region and the second doped region, and the cathode is electrically connected to the fourth doped region.

Abstract translation: 静电放电保护结构包括隔离层，高电压P阱，N阱，P阱，N型导电的第一掺杂区，P型导电的第二掺杂区，第三掺杂区 N型导电性区域，P型导电性的第四掺杂区域，阳极和阴极。 隔离层设置在基板上。 高压P阱设置在隔离层上。 N阱设置在高压P阱中。 P阱设置在高电压P阱中，P阱与N阱分离。 第一和第二掺杂区域设置在N阱中。 第三和第四掺杂区域设置在P阱中。 阳极电连接到第一掺杂区域和第二掺杂区域，阴极电连接到第四掺杂区域。

公开(公告)号：US09263562B2

公开(公告)日：2016-02-16

申请号：US14177228

申请日：2014-02-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Lu-An Chen ,  Ya-Ting Lin ,  Tien-Hao Tang

IPC: H01L23/62 ,  H01L29/74 ,  H01L27/02 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L27/0262 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/402 ,  H01L29/7432 ,  H01L29/87

Abstract: An electrostatic discharge protection structure includes a first well, a second well disposed in the first well, a first and a second doped region disposed in the first well, a third and a fourth doped region disposed in the second well, a first electrode electrically connected to the first doped region and the second doped region, and a second electrode electrically connected to the fourth doped region.

Abstract translation: 静电放电保护结构包括第一阱，设置在第一阱中的第二阱，设置在第一阱中的第一和第二掺杂区，设置在第二阱中的第三和第四掺杂区，第一电极电连接 到第一掺杂区和第二掺杂区，以及电连接到第四掺杂区的第二电极。

公开(公告)号：US20150228771A1

公开(公告)日：2015-08-13

申请号：US14177228

申请日：2014-02-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Lu-An Chen ,  Ya-Ting Lin ,  Tien-Hao Tang

IPC: H01L29/74 ,  H01L29/08 ,  H01L29/06 ,  H01L27/02

CPC classification number: H01L27/0262 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/402 ,  H01L29/7432 ,  H01L29/87

Abstract: An electrostatic discharge protection structure includes a first well, a second well disposed in the first well, a first and a second doped region disposed in the first well, a third and a fourth doped region disposed in the second well, a first electrode electrically connected to the first doped region and the second doped region, and a second electrode electrically connected to the fourth doped region.

Abstract translation: 静电放电保护结构包括第一阱，设置在第一阱中的第二阱，设置在第一阱中的第一和第二掺杂区，设置在第二阱中的第三和第四掺杂区，第一电极电连接 到第一掺杂区和第二掺杂区，以及电连接到第四掺杂区的第二电极。

公开(公告)号：US10062751B2

公开(公告)日：2018-08-28

申请号：US15402204

申请日：2017-01-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hou-Jen Chiu ,  Ya-Ting Lin ,  Mei-Ling Chao ,  Tien-Hao Tang ,  Kuan-Cheng Su

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L29/0638 ,  H01L29/0653 ,  H01L29/785

Abstract: A semiconductor device comprises a fin shaped structure, a shallow trench isolation, a diffusion break structure and a gate electrode. The fin shaped structure is disposed on a substrate. The shallow trench isolation is disposed in the substrate and surrounds the fin shaped structure. The diffusion break structure is disposed in the fin shaped structure, and the gate electrode is disposed across the fin shaped structure.

公开(公告)号：US20160118374A1

公开(公告)日：2016-04-28

申请号：US14986741

申请日：2016-01-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Lu-An Chen ,  Ya-Ting Lin ,  Tien-Hao Tang

IPC: H01L27/02 ,  H01L29/06 ,  H01L29/87 ,  H01L29/74

CPC classification number: H01L27/0262 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/402 ,  H01L29/7432 ,  H01L29/87

Abstract: An electrostatic discharge protection structure comprises an isolation layer, a high voltage P-well, an N-well, a P-well, a first doped region of N-type conductivity, a second doped region of P-type conductivity, a third doped region of N-type conductivity, a fourth doped region of P-type conductivity, an anode, and a cathode. The isolation layer is disposed on a substrate. The high voltage P-well is disposed on the isolation layer. The N-well is disposed in the high voltage P-well. The P-well is disposed in the high voltage P-well, and the P-well is separated from the N-well. The first and the second doped regions are disposed in the N-well. The third and the fourth doped regions are disposed in the P-well. The anode is electrically connected to the first doped region and the second doped region, and the cathode is electrically connected to the fourth doped region.

Abstract translation: 静电放电保护结构包括隔离层，高电压P阱，N阱，P阱，N型导电的第一掺杂区，P型导电的第二掺杂区，第三掺杂区 N型导电性区域，P型导电性的第四掺杂区域，阳极和阴极。 隔离层设置在基板上。 高压P阱设置在隔离层上。 N阱设置在高压P阱中。 P阱设置在高电压P阱中，P阱与N阱分离。 第一和第二掺杂区域设置在N阱中。 第三和第四掺杂区域设置在P阱中。 阳极电连接到第一掺杂区域和第二掺杂区域，阴极电连接到第四掺杂区域。