Invention Grant
- Patent Title: Method for cleaning metal gate surface
- Patent Title (中): 清洗金属浇口表面的方法
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Application No.: US14152497Application Date: 2014-01-10
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Publication No.: US09269585B2Publication Date: 2016-02-23
- Inventor: Shich-Chang Suen , Li-Chieh Wu , Chi-Jen Liu , He Hui Peng , Liang-Guang Chen , Yung-Chung Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763 ; H01L21/28 ; H01L21/02 ; H01L21/311
Abstract:
The present disclosure provides a method for forming an integrated circuit (IC) structure. The method includes providing a metal gate (MG), an etch stop layer (ESL) formed on the MG, and a dielectric layer formed on the ESL. The method further includes etching the ESL and the dielectric layer to form a trench. A surface of the MG exposed in the trench is oxidized to form a first oxide layer on the MG. The method further includes removing the first oxide layer using a H3PO4 solution.
Public/Granted literature
- US20150200089A1 Method For Metal Gate Surface Clean Public/Granted day:2015-07-16
Information query
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