The present disclosure relates to a silicon-on-insulator (SOI) substrate having a trap-rich layer, with crystal defects, which is disposed within a handle wafer, and an associated method of formation. In some embodiments, the SOI substrate has a handle wafer. A trap-rich layer, having a plurality of crystal defects that act to trap carriers, is disposed within the handle wafer at a position abutting a top surface of the handle wafer. An insulating layer is disposed onto the handle wafer. The insulating layer has a first side abutting the top surface of the handle wafer and an opposing second side abutting a thin layer of active silicon. By forming the trap-rich layer within the handle wafer, fabrication costs associated with depositing a trap-rich material (e.g., polysilicon) onto a handle wafer are reduced and thermal instability issues are prevented.