Invention Grant
US09269703B2 ESD protection using diode-isolated gate-grounded nMOS with diode string
有权
使用二极管隔离栅极接地nMOS与二极管串的ESD保护
- Patent Title: ESD protection using diode-isolated gate-grounded nMOS with diode string
- Patent Title (中): 使用二极管隔离栅极接地nMOS与二极管串的ESD保护
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Application No.: US14453907Application Date: 2014-08-07
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Publication No.: US09269703B2Publication Date: 2016-02-23
- Inventor: Ponnarith Pok , Kyle Schulmeyer , Roger A. Cline , Charvaka Duvvury
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/02 ; H01L21/8234 ; H01L27/06 ; H01L29/66 ; H01L29/78
Abstract:
An ESD protection circuit with a diode string coupled to a diode-isolated, gate-grounded NMOS ESD device. A method of forming an ESD protection circuit with a diode string coupled to a diode-isolated, gate-grounded NMOS ESD device.
Public/Granted literature
- US20140342515A1 ESD PROTECTION USING DIODE-ISOLATED GATE-GROUNDED NMOS WITH DIODE STRING Public/Granted day:2014-11-20
Information query
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