Invention Grant
- Patent Title: Graphene semiconductor and electrical device including the same
- Patent Title (中): 石墨烯半导体和电气设备包括相同的
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Application No.: US13905527Application Date: 2013-05-30
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Publication No.: US09269764B2Publication Date: 2016-02-23
- Inventor: Jong-ryoul Ahn , Jeong-tak Seo , Ji-hoon Park , Cheol-ho Jeon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2012-0084578 20120801
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/207 ; H01L29/786 ; H01L29/06 ; H01L21/02 ; H01L51/30 ; H01L51/40 ; H01L29/778 ; C23C18/08 ; B82Y99/00 ; B82Y30/00
Abstract:
A graphene semiconductor including graphene and a metal atomic layer disposed on the graphene, wherein the metal atomic layer includes a metal, which is capable of charge transfer with the graphene.
Public/Granted literature
- US20140034899A1 GRAPHENE SEMICONDUCTOR AND ELECTRICAL DEVICE INCLUDING THE SAME Public/Granted day:2014-02-06
Information query
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