Invention Grant
- Patent Title: Spacer scheme for semiconductor device
- Patent Title (中): 半导体器件的间隔方案
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Application No.: US14583211Application Date: 2014-12-26
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Publication No.: US09269811B2Publication Date: 2016-02-23
- Inventor: Ling-Chun Chou , I-Chang Wang , Ching-Wen Hung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L31/119
- IPC: H01L31/119 ; H01L29/78 ; H01L29/66 ; H01L21/8238 ; H01L29/165
Abstract:
A manufacturing method for a semiconductor device includes providing a substrate having at least agate structure formed thereon and a first spacer formed on sidewalls of the gate structure, performing an ion implantation to implant dopants into the substrate, forming a disposal spacer having at least a carbon-containing layer on the sidewalls of the gate structure, the carbon-containing layer contacting the first spacer, and performing a thermal treatment to form a protecting layer between the carbon-containing layer and the first spacer.
Public/Granted literature
- US20150108553A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-04-23
Information query
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