Invention Grant
US09275913B2 Memory arrays for both good data retention and low power operation
有权
存储器阵列，用于良好的数据保留和低功耗操作
- Patent Title: Memory arrays for both good data retention and low power operation
- Patent Title (中): 存储器阵列，用于良好的数据保留和低功耗操作
-
Application No.: US14133555Application Date: 2013-12-18
-
Publication No.: US09275913B2Publication Date: 2016-03-01
- Inventor: Yun Wang , Imran Hashim
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L21/66 ; G11C16/10 ; G11C11/02 ; H01L27/24 ; G11C11/56 ; H01L27/10 ; H01L45/00 ; G11C13/00
Abstract:
Designs and programming schemes can be used to form memory arrays having low power, high density and good data retention. High resistance interconnect lines can be used to partition the memory array can be partitioned into areas of high data retention and areas of low data retention. Variable gate voltages can be used in control transistors to store memory values having different data retention characteristics.
Public/Granted literature
- US20150171095A1 Memory Arrays for Both Good Data Retention and Low Power Operation Public/Granted day:2015-06-18
Information query
IPC分类:
