Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13960977Application Date: 2013-08-07
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Publication No.: US09275993B2Publication Date: 2016-03-01
- Inventor: Weon-Hong Kim , Moon-Kyun Song , Seok-Jun Won
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0099363 20120907
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/28 ; H01L27/092 ; H01L29/49 ; H01L29/51 ; H01L29/78 ; H01L21/8238
Abstract:
A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film.
Public/Granted literature
- US20140070325A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-03-13
Information query
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