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公开(公告)号：US09786785B2
公开(公告)日：2017-10-10
申请号：US15083251
申请日：2016-03-28
发明人： Kook-Tae Kim , Young-Tak Kim , Ho-Sung Son , Seok-Jun Won , Ji-Hye Yi , Chul-Woong Lee
CPC分类号： H01L29/7851 , H01L29/41783 , H01L29/4966 , H01L29/4983 , H01L29/518 , H01L29/66545 , H01L29/6656 , H01L29/66795 , H01L29/78 , H01L29/7848 , H01L29/785
摘要： Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.
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公开(公告)号：US09580800B2
公开(公告)日：2017-02-28
申请号：US14600132
申请日：2015-01-20
发明人： Byoung-Hoon Lee , June-Hee Lee , Geun-Woo Kim , Min-Woo Song , Seok-Jun Won
CPC分类号： C23C16/4404 , C23C16/32 , C23C16/34 , G01B2210/56 , H01L21/67005
摘要： A method for operating semiconductor manufacturing equipment is provided. The method includes forming a conductive thin film on an inner side surface of a reaction chamber and on a substrate in the reaction chamber, the conductive thin film including a first conductive material, and forming a particle preventive layer on the inner side surface of the reaction chamber in which the conductive thin film is formed.
摘要翻译： 提供了一种用于操作半导体制造设备的方法。 该方法包括在反应室的内侧表面和反应室中的基板上形成导电薄膜，所述导电薄膜包括第一导电材料，并且在反应的内侧表面上形成防颗粒层 其中形成导电薄膜。
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3.发明授权Methods of forming semiconductor devices, including performing a heat treatment after forming a metal layer and a high-k layer 有权形成半导体器件的方法，包括在形成金属层和高k层之后进行热处理公开(公告)号：US09431515B2
公开(公告)日：2016-08-30
申请号：US14640058
申请日：2015-03-06
发明人： Seok-Jun Won , Weon-Hong Kim , Moon-Kyun Song
IPC分类号： H01L21/8238 , H01L29/66 , H01L21/28 , H01L21/321 , H01L29/49 , H01L29/51
CPC分类号： H01L29/66545 , H01L21/28088 , H01L21/28176 , H01L21/28194 , H01L21/28202 , H01L21/321 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/517
摘要： Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming an insulating layer that includes a trench therein. The method includes forming a high-k layer in the trench. Moreover, the method includes forming a metal layer on the high-k layer, then performing a first heat treatment at a first temperature, and performing a second heat treatment at a second temperature that is higher than the first temperature.
摘要翻译： 提供了形成半导体器件的方法。 形成半导体器件的方法包括在其中形成包括沟槽的绝缘层。 该方法包括在沟槽中形成高k层。 此外，该方法包括在高k层上形成金属层，然后在第一温度下进行第一热处理，并在高于第一温度的第二温度下进行第二热处理。
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4.发明授权Semiconductor device, method for fabricating the same, and memory system including the semiconductor device 有权半导体器件及其制造方法以及包括该半导体器件的存储器系统公开(公告)号：US09312376B2
公开(公告)日：2016-04-12
申请号：US14155651
申请日：2014-01-15
发明人： Kook-Tae Kim , Young-Tak Kim , Ho-Sung Son , Seok-Jun Won , Ji-Hye Yi , Chul-Woong Lee
CPC分类号： H01L29/7851 , H01L29/41783 , H01L29/4966 , H01L29/4983 , H01L29/518 , H01L29/66545 , H01L29/6656 , H01L29/66795 , H01L29/78 , H01L29/7848 , H01L29/785
摘要： Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.
摘要翻译： 提供半导体装置及其制造方法以及包括半导体装置的电子装置。 半导体器件包括形成在衬底上并包括沟槽的层间绝缘层，形成在沟槽中的栅电极，形成在栅电极的侧壁上以形成L形的第一栅极间隔件，形成在第二栅极间隔 所述第一栅极间隔物具有L形并且具有低于氮化硅的介电常数的介电常数，以及形成在所述第二栅极间隔物上的第三间隔物。
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公开(公告)号：US09275993B2
公开(公告)日：2016-03-01
申请号：US13960977
申请日：2013-08-07
发明人： Weon-Hong Kim , Moon-Kyun Song , Seok-Jun Won
IPC分类号： H01L27/088 , H01L21/28 , H01L27/092 , H01L29/49 , H01L29/51 , H01L29/78 , H01L21/8238
CPC分类号： H01L27/088 , H01L21/28008 , H01L21/823807 , H01L21/823857 , H01L27/092 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/78
摘要： A semiconductor device includes a first interface film on a first area of a substrate, the first interface film including a first growth interface film and a second growth interface film on a lower portion of the first growth interface film, a first dielectric film on the first interface film, and a first gate electrode on the first dielectric film.
摘要翻译： 半导体器件包括在衬底的第一区域上的第一界面膜，第一界面膜在第一生长界面膜的下部包括第一生长界面膜和第二生长界面膜，第一介电膜在第一 界面膜和第一电介质膜上的第一栅电极。
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公开(公告)号：US09218977B2
公开(公告)日：2015-12-22
申请号：US14015414
申请日：2013-08-30
发明人： Seok-Jun Won , Weon-Hong Kim , Moon-Kyun Song , Hyung-Suk Jung
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/28 , H01L29/51 , H01L21/8234 , H01L21/8238 , H01L29/49 , H01L29/66 , H01L27/11
CPC分类号： H01L21/28185 , H01L21/82345 , H01L21/823842 , H01L27/1104 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A fabricating method of a semiconductor device includes stacking a high-k dielectric film not containing silicon (Si) and an insulating film containing silicon (Si) on a substrate, and diffusing Si contained in the insulating film into the high-k dielectric film by annealing the substrate having the high-k dielectric film and the insulating film stacked thereon.
摘要翻译： 半导体器件的制造方法包括在基板上堆叠不含硅（Si）的高k电介质膜和含硅（Si）的绝缘膜，并且将包含在绝缘膜中的Si扩散到高k电介质膜中，由 退火具有高k电介质膜的基板和堆叠在其上的绝缘膜。
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公开(公告)号：US20150162201A1
公开(公告)日：2015-06-11
申请号：US14477273
申请日：2014-09-04
发明人： In-Hee Lee , Min-Woo Song , Seok-Jun Won , Hyung-Suk Jung
CPC分类号： H01L21/28247 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L21/28518 , H01L21/76829 , H01L21/76843 , H01L21/76855 , H01L21/76897 , H01L29/6653 , H01L29/66545 , H01L29/66628
摘要： In a method of manufacturing a semiconductor device, a dummy gate structure including a dummy gate electrode and a gate mask sequentially stacked on a substrate is formed. A spacer is formed on a sidewall of the dummy gate structure. The gate mask is formed to expose the dummy gate electrode and to form a recess on the spacer. A capping layer pattern is formed to fill the recess in the spacer. The exposed dummy gate electrode is replaced with a gate electrode.
摘要翻译： 在制造半导体器件的方法中，形成包括依次层叠在基板上的伪栅极电极和栅极掩模的虚拟栅极结构。 在虚拟栅极结构的侧壁上形成间隔物。 形成栅极掩模以暴露伪栅电极并在间隔物上形成凹陷。 形成覆盖层图案以填充间隔件中的凹部。 暴露的虚拟栅电极被栅电极代替。
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公开(公告)号：US09035398B2
公开(公告)日：2015-05-19
申请号：US14010961
申请日：2013-08-27
发明人： Seok-Jun Won , Suk-Hoon Kim , Hyung-Suk Jung
CPC分类号： H01L29/78 , H01L21/28176 , H01L21/28194 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545
摘要： A semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including a trench, a gate insulating film in the trench, a diffusion film on the gate insulating film, the diffusion film including a first diffusion material, a gate metal structure on the diffusion film, the gate metal structure including a second diffusion material, and a diffusion prevention film between the gate metal structure and the diffusion film, the diffusion prevention film being configured to prevent diffusion of the second diffusion material from the gate metal structure, the first diffusion material diffused from the diffusion film exists in the gate insulating film.
摘要翻译： 一种半导体器件，包括：衬底上的层间绝缘膜，所述层间绝缘膜包括沟槽，所述沟槽中的栅极绝缘膜，所述栅极绝缘膜上的扩散膜，所述扩散膜包括第一扩散材料，栅极金属结构 在扩散膜上，包括第二扩散材料的栅极金属结构和栅极金属结构和扩散膜之间的扩散防止膜，所述扩散防止膜被配置为防止第二扩散材料从栅极金属结构扩散， 从扩散膜扩散的第一扩散材料存在于栅极绝缘膜中。
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公开(公告)号：US09034714B2
公开(公告)日：2015-05-19
申请号：US14011095
申请日：2013-08-27
发明人： Seok-Jun Won , Hyung-Suk Jung
IPC分类号： H01L21/336 , H01L29/66 , H01L21/8234 , H01L29/51 , H01L21/28 , H01L29/49
CPC分类号： H01L29/66545 , H01L21/28088 , H01L21/28202 , H01L21/823462 , H01L29/4966 , H01L29/517 , H01L29/518
摘要： A method of fabricating a semiconductor device includes providing a dummy gate insulation film formed on a substrate, the dummy gate insulation film including a first material and providing a spacer formed at least one side of the gate insulation film, the spacer including the first material, removing the first material included in the dummy gate insulation film by a first process, removing the dummy gate insulation film from which the first material has been removed by a second process different from the first process, and sequentially forming a gate insulation film and a gate electrode structure on the substrate.
摘要翻译： 一种制造半导体器件的方法包括：提供形成在衬底上的虚拟栅极绝缘膜，所述虚拟栅极绝缘膜包括第一材料并提供形成在所述栅极绝缘膜的至少一个侧面上的间隔物，所述间隔物包括所述第一材料， 通过第一工序除去包含在虚拟栅极绝缘膜中的第一材料，通过与第一工艺不同的第二工序除去已经除去第一材料的虚拟栅极绝缘膜，并顺序地形成栅极绝缘膜和栅极 基板上的电极结构。
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10.发明申请METHODS OF FORMING SEMICONDUCTOR DEVICES, INCLUDING PERFORMING A HEAT TREATMENT AFTER FORMING A METAL LAYER AND A HIGH-K LAYER 有权形成半导体器件的方法，包括在形成金属层和高K层之后执行热处理公开(公告)号：US20160013107A1
公开(公告)日：2016-01-14
申请号：US14640058
申请日：2015-03-06
发明人： Seok-Jun Won , Weon-Hong Kim , Moon-Kyun Song
IPC分类号： H01L21/8238 , H01L29/66 , H01L21/324 , H01L21/28 , H01L21/321
CPC分类号： H01L29/66545 , H01L21/28088 , H01L21/28176 , H01L21/28194 , H01L21/28202 , H01L21/321 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/517
摘要： Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming an insulating layer that includes a trench therein. The method includes forming a high-k layer in the trench. Moreover, the method includes forming a metal layer on the high-k layer, then performing a first heat treatment at a first temperature, and performing a second heat treatment at a second temperature that is higher than the first temperature.
摘要翻译： 提供了形成半导体器件的方法。 形成半导体器件的方法包括在其中形成包括沟槽的绝缘层。 该方法包括在沟槽中形成高k层。 此外，该方法包括在高k层上形成金属层，然后在第一温度下进行第一热处理，并在高于第一温度的第二温度下进行第二热处理。
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