Invention Grant
- Patent Title: Integrated circuit structure with bulk silicon FinFET
- Patent Title (中): 具有体硅FinFET的集成电路结构
-
Application No.: US14734310Application Date: 2015-06-09
-
Publication No.: US09276002B2Publication Date: 2016-03-01
- Inventor: Kangguo Cheng , Ali Khakifirooz , Qizhi Liu , Edward J. Nowak , Jed H. Rankin
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Anthony J. Canale
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/66 ; H01L29/78 ; H01L27/12 ; H01L29/06 ; H01L29/161

Abstract:
The present disclosure generally provides for an integrated circuit (IC) structure with a bulk silicon finFET and methods of forming the same. An IC structure according to the present disclosure can include: a bulk substrate; a finFET located on a first region of the bulk substrate; and a layered dummy structure located on a second region of the bulk substrate, wherein the layered dummy structure includes a first crystalline semiconductive layer, a second crystalline semiconductive layer positioned on the first crystalline semiconductive layer, wherein the first crystalline semiconductive layer comprises a material distinct from the second crystalline semiconductive layer, and a third crystalline semiconductive layer positioned on the second crystalline semiconductive layer, wherein the third crystalline semiconductive layer comprises the material distinct from the second crystalline semiconductive layer.
Public/Granted literature
- US20150294973A1 INTEGRATED CIRCUIT STRUCTURE WITH BULK SILICON FINFET Public/Granted day:2015-10-15
Information query
IPC分类: