Invention Grant
US09276002B2 Integrated circuit structure with bulk silicon FinFET 有权
具有体硅FinFET的集成电路结构

Integrated circuit structure with bulk silicon FinFET
Abstract:
The present disclosure generally provides for an integrated circuit (IC) structure with a bulk silicon finFET and methods of forming the same. An IC structure according to the present disclosure can include: a bulk substrate; a finFET located on a first region of the bulk substrate; and a layered dummy structure located on a second region of the bulk substrate, wherein the layered dummy structure includes a first crystalline semiconductive layer, a second crystalline semiconductive layer positioned on the first crystalline semiconductive layer, wherein the first crystalline semiconductive layer comprises a material distinct from the second crystalline semiconductive layer, and a third crystalline semiconductive layer positioned on the second crystalline semiconductive layer, wherein the third crystalline semiconductive layer comprises the material distinct from the second crystalline semiconductive layer.
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