Invention Grant
- Patent Title: Method for preparing monosilane using trialkoxysilane
- Patent Title (中): 使用三烷氧基硅烷制备甲硅烷的方法
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Application No.: US14432900Application Date: 2013-10-02
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Publication No.: US09278864B2Publication Date: 2016-03-08
- Inventor: Taek Joong Kim , Yong Il Kim , Kyung Yeol Kim , Deok Yun Kim , Ashurov Khatam , Salikhov Shavkat , Rotshteyn Vladimir , Ashurova Khekayat , Kurbanov Aziz , Abdisaidov Ilyos , Azizov Sultan , Ashurov Rustam
- Applicant: OCI COMPANY LTD. , INSTITUTE OF ION-PLASMA AND LASER TECHNOLOGIES
- Applicant Address: KR Seoul UZ Tashkent
- Assignee: OCI COMPANY LTD.,INSTITUTE OF ION-PLASMA AND LASER TECHNOLOGIES
- Current Assignee: OCI COMPANY LTD.,INSTITUTE OF ION-PLASMA AND LASER TECHNOLOGIES
- Current Assignee Address: KR Seoul UZ Tashkent
- Agency: Hauptman Ham, LLP
- Priority: UZ20120401 20121002; KR10-2012-0150993 20121221
- International Application: PCT/KR2013/008840 WO 20131002
- International Announcement: WO2014/054889 WO 20140410
- Main IPC: C01B33/04
- IPC: C01B33/04 ; B01J23/72
Abstract:
Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane.
Public/Granted literature
- US20150251916A1 METHOD FOR PREPARING MONOSILANE USING TRIALKOXYSILANE Public/Granted day:2015-09-10
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