Invention Grant
- Patent Title: Reducing switching variation in magnetoresistive devices
- Patent Title (中): 降低磁阻器件的开关变化
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Application No.: US14298085Application Date: 2014-06-06
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Publication No.: US09281168B2Publication Date: 2016-03-08
- Inventor: Chaitanya Mudivarthi , Jason Allen Janesky , Jijun Sun , Frederick Bennett Mancoff , Sanjeev Aggarwal
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L27/22 ; H01J43/12
Abstract:
The magnetic characteristics of a magnetoresistive device are improved by rendering magnetic debris non-magnetic during processing operations. Further improvement is realized by annealing the partially- or fully-formed device in the presence of a magnetic field in order to eliminate or stabilize magnetic micro-pinning sites or other magnetic abnormalities within the magnetoresistive stack for the device. Such improvement in magnetic characteristics decreases deviation in switching characteristics in arrays of such magnetoresistive devices such as those present in MRAMs.
Public/Granted literature
- US20150357560A1 REDUCING SWITCHING VARIATION IN MAGNETORESISTIVE DEVICES Public/Granted day:2015-12-10
Information query
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