Invention Grant
- Patent Title: Decoupling measurement of layer thicknesses of a plurality of layers of a circuit structure
- Patent Title (中): 对电路结构的多层的层厚进行去耦测量
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Application No.: US14155504Application Date: 2014-01-15
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Publication No.: US09281249B2Publication Date: 2016-03-08
- Inventor: Alok Vaid , Abner Bello , Sipeng Gu , Lokesh Subramany , Xiang Hu , Akshey Sehgal
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Kristian Ziegler
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01B11/02 ; G01B11/06 ; G03F7/20 ; G01N21/21

Abstract:
Measurement of thickness of layers of a circuit structure is obtained, where the thickness of the layers is measured using an optical critical dimension (OCD) measurement technique, and the layers includes a high-k layer and an interfacial layer. Measurement of thickness of the high-k layer is separately obtained, where the thickness of the high-k layer is measured using a separate measurement technique from the OCD measurement technique. The separate measurement technique provides greater decoupling, as compared to the OCD measurement technique, of a signal for thickness of the high-k layer from a signal for thickness of the interfacial layer of the layers. Characteristics of the circuit structure, such as a thickness of the interfacial layer, are ascertained using, in part, the separately obtained thickness measurement of the high-k layer.
Public/Granted literature
- US20150198435A1 DECOUPLING MEASUREMENT OF LAYER THICKNESSES OF A PLURALITY OF LAYERS OF A CIRCUIT STRUCTURE Public/Granted day:2015-07-16
Information query
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