Invention Grant
- Patent Title: Substrate backside texturing
- Patent Title (中): 基材背面纹理
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Application No.: US14453352Application Date: 2014-08-06
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Publication No.: US09281251B2Publication Date: 2016-03-08
- Inventor: Carlos A Fonseca , Anton Devilliers , Benjamen M Rathsack , Jeffrey T Smith , Lior Huli
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: DLA Piper LLP (US)
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/66 ; H01L21/306 ; G03F7/20
Abstract:
Embodiments described relate to a method and apparatus for reducing lithographic distortion. A backside of a semiconductor substrate may be texturized. Then a lithographic process may be performed on the semiconductor substrate having the texturized backside.
Public/Granted literature
- US20150044785A1 SUBSTRATE BACKSIDE TEXTURING Public/Granted day:2015-02-12
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