Invention Grant
- Patent Title: System and method for fine pitch PoP structure
- Patent Title (中): 细间距PoP结构的系统和方法
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Application No.: US14175668Application Date: 2014-02-07
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Publication No.: US09281288B2Publication Date: 2016-03-08
- Inventor: Cheng-Chung Lin , Hsiu-Jen Lin , Cheng-Ting Chen , Chun-Cheng Lin , Ming-Da Cheng , Chung-Shi Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/498 ; H01L25/10 ; H01L25/00 ; H01L23/538

Abstract:
A fine pitch package-on-package (PoP), and a method of forming, are provided. The PoP may be formed by placing connections, e.g., solder balls, on a first substrate having a semiconductor die attached thereto. A first reflow process is performed to elongate the solder balls. Thereafter, a second substrate having another semiconductor die attached thereto is connected to the solder balls. A second reflow process is performed to form an hourglass connection.
Public/Granted literature
- US20140151878A1 System and Method for Fine Pitch PoP Structure Public/Granted day:2014-06-05
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