Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13758917Application Date: 2013-02-04
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Publication No.: US09281389B2Publication Date: 2016-03-08
- Inventor: Jae Hoon Park , In Hyuk Song , Dong Soo Seo , Kwang Soo Kim , Kee Ju Um
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd
- Current Assignee: Samsung Electro-Mechanics Co., Ltd
- Current Assignee Address: KR Gyunggi-Do
- Agency: Ladas & Parry, LLP
- Priority: KR10-2012-0119857 20121026
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/778 ; H01L29/06 ; H01L29/20
Abstract:
Disclosed herein is a semiconductor device including: a source electrode formed on one side of an N-type AlGaN layer; N-type and P-type AlGaN layers formed on the other side of the P-type AlGaN layer and formed in a direction perpendicular to the source electrode; a gate electrode formed on one side of the N-type and P-type AlGaN layers; and a drain electrode formed on the other side of the N-type and P-type AlGaN layers.
Public/Granted literature
- US20140117373A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-05-01
Information query
IPC分类:
