Invention Grant
- Patent Title: High-frequency device and directional coupler
- Patent Title (中): 高频设备和定向耦合器
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Application No.: US14619497Application Date: 2015-02-11
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Publication No.: US09281797B2Publication Date: 2016-03-08
- Inventor: Hirokazu Yazaki
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JP2012-185636 20120824
- Main IPC: H01P5/18
- IPC: H01P5/18 ; H01P1/23 ; H03H7/24 ; H03H7/38 ; H01P1/201 ; H01P1/22 ; H01P1/203 ; H03H7/06 ; H03H1/00

Abstract:
A high-frequency device includes a substrate including a plurality of layers that are stacked on top of one another and that include dielectric and magnetic layers, terminals, pattern conductors each formed on one layer, and via conductors each extending through one layer. The pattern conductors and via conductors connect the terminals and form a signal line that transmits a high-frequency signal. A first portion of the signal line includes a via conductor extending through one magnetic layer and/or a pattern conductor sandwiched between two magnetic layers and has a predetermined resistance to the high-frequency signal. A second portion of the signal line includes a capacitor formed of two pattern electrodes with at least one dielectric layer and no magnetic layers sandwiched there between and/or an inductor including a pattern conductor formed on a dielectric layer. The high-frequency device has an impedance to the high-frequency signal at the terminals.
Public/Granted literature
- US20150155848A1 HIGH-FREQUENCY DEVICE AND DIRECTIONAL COUPLER Public/Granted day:2015-06-04
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