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US09286160B2 System and method for phase change memory with erase flag cells 有权
具有擦除标志单元的相变存储器的系统和方法

System and method for phase change memory with erase flag cells
Abstract:
According to embodiments, a phase change memory (PCM) array includes a plurality of memory cells grouped into memory blocks. In the PCM array, each memory cell is a PCM cell. The PCM array also includes a plurality of erase flag cells. Each erase flag cell of the plurality of erase flag cells is associated with a memory block and indicates whether the memory block stores valid data or erased data.
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