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US09286963B2 Method of writing to a spin torque magnetic random access memory 有权
写入自旋转矩磁随机存取存储器的方法

Method of writing to a spin torque magnetic random access memory
Abstract:
Circuitry and a method provide an increased tunnel barrier endurance (lifetime) previously shortened by dielectric breakdown by providing a pulse of opposite polarity associated with a write pulse. The pulse of opposite polarity may comprise equal or less width and amplitude than that of the write pulse, may be applied with each write pulse or a series of write pulses, and may be applied prior to or subsequent to the write pulse.
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