Invention Grant
- Patent Title: Method of writing to a spin torque magnetic random access memory
- Patent Title (中): 写入自旋转矩磁随机存取存储器的方法
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Application No.: US14313824Application Date: 2014-06-24
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Publication No.: US09286963B2Publication Date: 2016-03-15
- Inventor: Michael Schneider , Dimitri Houssameddine , Jon Slaughter
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16

Abstract:
Circuitry and a method provide an increased tunnel barrier endurance (lifetime) previously shortened by dielectric breakdown by providing a pulse of opposite polarity associated with a write pulse. The pulse of opposite polarity may comprise equal or less width and amplitude than that of the write pulse, may be applied with each write pulse or a series of write pulses, and may be applied prior to or subsequent to the write pulse.
Public/Granted literature
- US20150023093A1 METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2015-01-22
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