Method of writing to a spin torque magnetic random access memory
    1.
    发明授权
    Method of writing to a spin torque magnetic random access memory 有权
    写入自旋转矩磁随机存取存储器的方法

    公开(公告)号:US09589622B2

    公开(公告)日:2017-03-07

    申请号:US15057761

    申请日:2016-03-01

    CPC classification number: G11C11/1675 G11C11/1673

    Abstract: Circuitry and methods provide an increased tunnel barrier endurance (lifetime) previously shortened by dielectric breakdown by providing a charging pulses of opposite polarity in comparison with write pulses. The charging pulse of opposite polarity may comprise equal or different width and amplitude than that of the write pulse, may be applied with each write pulse or a series of write pulses, and may be applied prior to or subsequent to the write pulse. A register is also used to keep track of the read pulse polarity such that read pulses of alternating polarity can be used in reading operations.

    Abstract translation: 电路和方法通过提供与写入脉冲相比极性相反的充电脉冲,提供先前通过电介质击穿缩短的隧道势垒耐力(寿命)。 相反极性的充电脉冲可以包括与写入脉冲相同或不同的宽度和幅度,可以用每个写入脉冲或一系列写入脉冲施加,并且可以在写入脉冲之前或之后施加。 寄存器还用于跟踪读取脉冲极性,使得可以在读取操作中使用交替极性的读取脉冲。

    Method of writing to a spin torque magnetic random access memory
    2.
    发明授权
    Method of writing to a spin torque magnetic random access memory 有权
    写入自旋转矩磁随机存取存储器的方法

    公开(公告)号:US09286963B2

    公开(公告)日:2016-03-15

    申请号:US14313824

    申请日:2014-06-24

    CPC classification number: G11C11/1675 G11C11/1673

    Abstract: Circuitry and a method provide an increased tunnel barrier endurance (lifetime) previously shortened by dielectric breakdown by providing a pulse of opposite polarity associated with a write pulse. The pulse of opposite polarity may comprise equal or less width and amplitude than that of the write pulse, may be applied with each write pulse or a series of write pulses, and may be applied prior to or subsequent to the write pulse.

    Abstract translation: 电路和方法通过提供与写入脉冲相关的相反极性的脉冲,提供先前通过电介质击穿缩短的隧道势垒耐力(寿命)。 相反极性的脉冲可以包括与写入脉冲相等或更小的宽度和幅度,可以用每个写入脉冲或一系列写入脉冲施加,并且可以在写入脉冲之前或之后施加。

    METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY
    3.
    发明申请
    METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY 审中-公开
    写入旋转磁力随机存取存储器的方法

    公开(公告)号:US20160180911A1

    公开(公告)日:2016-06-23

    申请号:US15057761

    申请日:2016-03-01

    CPC classification number: G11C11/1675 G11C11/1673

    Abstract: Circuitry and methods provide an increased tunnel barrier endurance (lifetime) previously shortened by dielectric breakdown by providing a charging pulses of opposite polarity in comparison with write pulses. The charging pulse of opposite polarity may comprise equal or different width and amplitude than that of the write pulse, may be applied with each write pulse or a series of write pulses, and may be applied prior to or subsequent to the write pulse. A register is also used to keep track of the read pulse polarity such that read pulses of alternating polarity can be used in reading operations.

    Abstract translation: 电路和方法通过提供与写入脉冲相比极性相反的充电脉冲,提供先前通过电介质击穿缩短的隧道势垒耐力(寿命)。 相反极性的充电脉冲可以包括与写入脉冲相同或不同的宽度和幅度,可以用每个写入脉冲或一系列写入脉冲施加,并且可以在写入脉冲之前或之后施加。 寄存器还用于跟踪读取脉冲极性,使得可以在读取操作中使用交替极性的读取脉冲。

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