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    Preprogrammed data recovery
    1.
    发明授权
    Preprogrammed data recovery 有权

    公开(公告)号：US10659081B2

    公开(公告)日：2020-05-19

    申请号：US15846242

    申请日：2017-12-19

    Applicant: Everspin Technologies Inc.

    Inventor： Sumio Ikegawa ,  Jon Slaughter

    IPC: H03M13/29 ,  G11C29/52 ,  G06F11/10 ,  G06F11/16

    Abstract: Techniques for recovering preprogrammed data from non-volatile memory are provided that include majority voting and/or use of one or more levels of ECC correction. Embodiments include storage of multiple copies of the data where ECC correction is performed before and after majority voting with respect to the multiple copies. Multiple levels of ECC correction can also be performed where one level of ECC is performed at the local level (e.g. on-chip), whereas another level of ECC correction is performed at a system level.

    Method of writing to a spin torque magnetic random access memory
    3.
    发明授权
    Method of writing to a spin torque magnetic random access memory 有权
    写入自旋转矩磁随机存取存储器的方法

    公开(公告)号：US09589622B2

    公开(公告)日：2017-03-07

    申请号：US15057761

    申请日：2016-03-01

    Applicant: Everspin Technologies, Inc.

    Inventor： Michael Schneider ,  Dimitri Houssameddine ,  Jon Slaughter

    IPC: G11C11/00 ,  G11C11/16

    CPC classification number: G11C11/1675 ,  G11C11/1673

    Abstract: Circuitry and methods provide an increased tunnel barrier endurance (lifetime) previously shortened by dielectric breakdown by providing a charging pulses of opposite polarity in comparison with write pulses. The charging pulse of opposite polarity may comprise equal or different width and amplitude than that of the write pulse, may be applied with each write pulse or a series of write pulses, and may be applied prior to or subsequent to the write pulse. A register is also used to keep track of the read pulse polarity such that read pulses of alternating polarity can be used in reading operations.

    Abstract translation: 电路和方法通过提供与写入脉冲相比极性相反的充电脉冲，提供先前通过电介质击穿缩短的隧道势垒耐力（寿命）。 相反极性的充电脉冲可以包括与写入脉冲相同或不同的宽度和幅度，可以用每个写入脉冲或一系列写入脉冲施加，并且可以在写入脉冲之前或之后施加。 寄存器还用于跟踪读取脉冲极性，使得可以在读取操作中使用交替极性的读取脉冲。

    Magnetic memory having ROM-like storage and method therefore
    4.
    发明授权
    Magnetic memory having ROM-like storage and method therefore 有权
    因此，具有ROM状存储器和方法的磁存储器

    公开(公告)号：US09576636B1

    公开(公告)日：2017-02-21

    申请号：US15087469

    申请日：2016-03-31

    Applicant: Everspin Technologies, Inc.

    Inventor： Jon Slaughter

    IPC: G11C11/00 ,  G11C11/16 ,  G11C11/18 ,  G11C13/00 ,  G11C11/56

    CPC classification number: G11C11/1675 ,  G11C11/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/18 ,  G11C11/5607 ,  G11C13/0035 ,  G11C13/004

    Abstract: A magnetoresistive memory device that stores data in the reference portion of spin-torque memory cells provides for more robust data storage. In normal operation, the memory cells use the free portion of the memory cell for data storage. Techniques for storing data in the reference portions of memory cells are presented, along with techniques for recovering data stored in the reference portions of memory cells.

    Abstract translation: 将数据存储在自旋扭矩存储单元的参考部分中的磁阻存储器件提供更强大的数据存储。 在正常操作中，存储器单元使用存储器单元的空闲部分进行数据存储。 介绍了存储单元的参考部分中存储数据的技术，以及用于恢复存储在存储器单元的参考部分中的数据的技术。

    High temperature data retention in magnetoresistive random access memory
    6.
    发明授权
    High temperature data retention in magnetoresistive random access memory 有权
    磁阻随机存取存储器中的高温数据保留

    公开(公告)号：US09455015B2

    公开(公告)日：2016-09-27

    申请号：US14879061

    申请日：2015-10-08

    Applicant: Everspin Technologies, Inc.

    Inventor： Jon Slaughter ,  Jason Allen Janesky

    IPC: G11C11/00 ,  G11C11/16 ,  G11C13/00

    CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C13/0002 ,  G11C13/0097 ,  G11C17/16 ,  G11C17/18 ,  G11C29/006 ,  G11C29/06

    Abstract: Techniques and circuits for storing and retrieving data using spin-torque magnetic memory cells as anti-fuses are presented. Circuits are included to allow higher-magnitude voltages and currents to be applied to magnetic memory cells to intentionally break down the dielectric layer included the magnetic tunnel junction. Magnetic memory cells having a normal-resistance magnetic tunnel junction with an intact dielectric layer are used to store a first data state, and magnetic memory cells having a magnetic tunnel junction with a broken-down dielectric layer are used to store a second data state. Data can be stored in such a manner during wafer probe and then later read out directly or copied into other magnetic or non-magnetic memory on the device for use in operations after the device is included in a system.

    Abstract translation: 提出了使用自旋扭矩磁存储单元作为抗熔丝来存储和检索数据的技术和电路。 包括电路以允许将更大幅度的电压和电流施加到磁存储器单元以有意地分解包括磁性隧道结的介电层。 使用具有与完整电介质层的正电阻磁隧道结的磁存储单元来存储第一数据状态，并且使用具有与分解电介质层的磁性隧道结的磁存储单元来存储第二数据状态。 可以在晶片探测期间以这种方式存储数据，然后在设备被包括在系统中之后，随后直接读出或复制到设备上的其他磁性或非磁性存储器中以用于操作。

    Magnetoresistive Memory Element having a Metal Oxide Tunnel Barrier
    7.
    发明申请
    Magnetoresistive Memory Element having a Metal Oxide Tunnel Barrier 审中-公开
    具有金属氧化物隧道屏障的磁阻存储元件

    公开(公告)号：US20160172582A1

    公开(公告)日：2016-06-16

    申请号：US15043633

    申请日：2016-02-15

    Applicant: Everspin Technologies, Inc.

    Inventor： Renu Whig ,  Jason Janesky ,  Nicholas Rizzo ,  Jon Slaughter ,  Dimitri Houssameddine

    IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22

    CPC classification number: H01L43/02 ,  B82Y10/00 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10S977/935

    Abstract: A magnetoresistive memory array including a plurality of magnetoresistive memory elements wherein each magnetoresistive memory element comprises a free layer including at least one ferromagnetic layer having perpendicular magnetic anisotropy, a fixed layer, and a tunnel barrier, disposed between and in contact with the free and fixed layers. The tunnel barrier includes a first metal-oxide layer, having a thickness between 1 and 10 Angstroms, a second metal-oxide layer, having a thickness between 3 and 6 Angstroms, disposed on the first metal-oxide layer, and a third metal-oxide layer, having a thickness between 3 and 6 Angstroms, disposed over the second metal-oxide layer. In one embodiment, the third metal-oxide layer is in contact with the free layer or fixed layer. The tunnel barrier may also include a fourth metal-oxide layer, having a thickness between 1 and 10 Angstroms, disposed between the second and third metal-oxide layers.

    Abstract translation: 一种包括多个磁阻存储元件的磁阻存储器阵列，其中每个磁阻存储元件包括自由层，该自由层包括至少一个具有垂直磁各向异性的铁磁层，固定层和隧道势垒，该自由层设置在自由和固定 层。 隧道势垒包括设置在第一金属氧化物层上的第一金属氧化物层，其厚度为1至10埃，厚度为3埃至6埃的第二金属氧化物层，以及第三金属氧化物层， 氧化物层，其厚度为3埃至6埃，设置在第二金属氧化物层上。 在一个实施例中，第三金属氧化物层与自由层或固定层接触。 隧道势垒还可以包括设置在第二和第三金属氧化物层之间的厚度在1埃和10埃之间的第四金属氧化物层。

    Method of writing to a spin torque magnetic random access memory
    8.
    发明授权
    Method of writing to a spin torque magnetic random access memory 有权
    写入自旋转矩磁随机存取存储器的方法

    公开(公告)号：US09286963B2

    公开(公告)日：2016-03-15

    申请号：US14313824

    申请日：2014-06-24

    Applicant: Everspin Technologies, Inc.

    Inventor： Michael Schneider ,  Dimitri Houssameddine ,  Jon Slaughter

    IPC: G11C11/00 ,  G11C11/16

    CPC classification number: G11C11/1675 ,  G11C11/1673

    Abstract: Circuitry and a method provide an increased tunnel barrier endurance (lifetime) previously shortened by dielectric breakdown by providing a pulse of opposite polarity associated with a write pulse. The pulse of opposite polarity may comprise equal or less width and amplitude than that of the write pulse, may be applied with each write pulse or a series of write pulses, and may be applied prior to or subsequent to the write pulse.

    Abstract translation: 电路和方法通过提供与写入脉冲相关的相反极性的脉冲，提供先前通过电介质击穿缩短的隧道势垒耐力（寿命）。 相反极性的脉冲可以包括与写入脉冲相等或更小的宽度和幅度，可以用每个写入脉冲或一系列写入脉冲施加，并且可以在写入脉冲之前或之后施加。

    Tuning magnetic anisotropy for spin-torque memory
    10.
    发明授权
    Tuning magnetic anisotropy for spin-torque memory 有权

    公开(公告)号：US10461243B2

    公开(公告)日：2019-10-29

    申请号：US15888136

    申请日：2018-02-05

    Applicant: EVERSPIN TECHNOLOGIES, INC.

    Inventor： Han-Jong Chia ,  Jon Slaughter

    IPC: H01L21/68 ,  H01L43/08 ,  G11C11/16 ,  H01F10/32 ,  H01L43/10 ,  H01L27/22

    Abstract: Techniques for configuring the layers included in the free portion of a spin-torque magnetoresistive device are presented that allow for characteristics of the free portion to be tuned to meet the needs of various applications. In one embodiment, high data retention is achieved by balancing the perpendicular magnetic anisotropy of the ferromagnetic layers in the free portion. In other embodiments, imbalanced ferromagnetic layers provide for lower switching current for the magnetoresistive device. In various embodiments, different coupling layers can be used to provide exchange coupling between the ferromagnetic layers in the free portion, including oscillatory coupling layers, ferromagnetic coupling layers using materials that can alloy with the neighboring ferromagnetic layers, and discontinuous layers of dielectric material such as MgO that result in limited coupling between the ferromagnetic layers and increases perpendicular magnetic anisotropy (PMA) at the interface with those layers.

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