Invention Grant
- Patent Title: Method of forming multilayer graphene structure
- Patent Title (中): 形成多层石墨烯结构的方法
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Application No.: US14309128Application Date: 2014-06-19
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Publication No.: US09287116B2Publication Date: 2016-03-15
- Inventor: Hwansoo Suh , Insu Jeon , Young-jae Song , Qinke Wu , Seong-jun Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.,Research & Business Foundation Sungkyunkwan University
- Current Assignee: Samsung Electronics Co., Ltd.,Research & Business Foundation Sungkyunkwan University
- Current Assignee Address: KR Gyeonggi-do KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0010888 20140128
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L21/02

Abstract:
According to example embodiments, a method of forming a multilayer graphene structure includes forming a sacrificial layer on the growth substrate, growing a first graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, and growing at least one more graphene layer on the growth substrate. The growing at least one more graphene layer includes removing at least a part of the sacrificial layer.
Public/Granted literature
- US20150214048A1 METHOD OF FORMING MULTILAYER GRAPHENE STRUCTURE Public/Granted day:2015-07-30
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