公开(公告)号：US09287116B2

公开(公告)日：2016-03-15

申请号：US14309128

申请日：2014-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwansoo Suh ,  Insu Jeon ,  Young-jae Song ,  Qinke Wu ,  Seong-jun Jung

IPC: H01L29/15 ,  H01L21/02

CPC classification number: H01L21/02527 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0262 ,  H01L21/02664

Abstract: According to example embodiments, a method of forming a multilayer graphene structure includes forming a sacrificial layer on the growth substrate, growing a first graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, and growing at least one more graphene layer on the growth substrate. The growing at least one more graphene layer includes removing at least a part of the sacrificial layer.

Abstract translation: 根据示例性实施例，形成多层石墨烯结构的方法包括在生长衬底上形成牺牲层，使用化学气相沉积（CVD）方法在牺牲层上生长第一石墨烯层，并且生长至少一个以上石墨烯层 在生长底物上。 生长至少一个以上的石墨烯层包括去除牺牲层的至少一部分。

公开(公告)号：US09963346B2

公开(公告)日：2018-05-08

申请号：US15017753

申请日：2016-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Hwansoo Suh ,  Youngjae Song ,  Qinke Wu ,  Sungjoo Lee ,  Minwoo Kim ,  Sangwoo Park

IPC: C23C16/34 ,  C01B21/064 ,  C23C16/02

CPC classification number: C01B21/064 ,  C23C16/02 ,  C23C16/0209 ,  C23C16/0254 ,  C23C16/342

Abstract: A seamless hexagonal h-BN atomic monolayer thin film has a pseudo-single crystal structure including a plurality of h-BN grains that are seamlessly merged. Each of the h-BN grains has a dimension in a range from about 10 μm to about 1,000 μm. The seamless hexagonal boron nitride (h-BN) atomic monolayer thin film may be fabricated by a process including pre-annealing a metal thin film at a first temperature in a chamber while supplying hydrogen gas to the chamber; supplying nitrogen source gas and boron source gas to the chamber; and forming the seamless h-BN atomic monolayer thin film having a pseudo-single crystal atomic monolayer structure having a grain dimension in a range from about 10 μm to about 1,000 μm by annealing the pre-annealed metal thin film at a second temperature.

公开(公告)号：US10153732B2

公开(公告)日：2018-12-11

申请号：US15364433

申请日：2016-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Insu Jeon ,  Jhinhwan Lee ,  Hwansoo Suh

IPC: H03F1/36 ,  H03F1/02 ,  H03F3/45

Abstract: An amplifier circuit and a method of recovering an input signal in the amplifier circuit are provided. The amplifier circuit may recover an input signal by using a time constant and an output signal of a signal amplifier which is delayed by a certain period, based on characteristics of an inverse Laplace transform of a transfer function of the signal amplifier. A time required for recovering the input signal may be shorter than the time constant of the signal amplifier.

公开(公告)号：US08879138B2

公开(公告)日：2014-11-04

申请号：US13741894

申请日：2013-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwansoo Suh ,  Chang-won Lee ,  Yeon-sang Park ,  Jineun Kim

IPC: G02F1/01 ,  G02F1/09 ,  G02F1/11 ,  G02F1/29 ,  G02F1/035 ,  G02F1/00 ,  G02B6/122

CPC classification number: G02F1/00 ,  G02B6/1226 ,  G02F1/01 ,  G02F1/035 ,  G02F1/29 ,  G02F2203/10

Abstract: A surface plasmon polariton modulator capable of locally varying a physical property of a dielectric material to control a surface plasmon polariton. The surface plasmon polariton modulator includes a dielectric layer, including first and second dielectric portions, which is interposed between two metal layers. The second dielectric portion has a refractive index which varies with an electric field, a magnetic field, heat, a sound wave, or a chemical and/or biological operation applied thereto. The surface plasmon polariton modulator is configured to control one of an advancing direction, an intensity, a phase, or the like of a surface plasmon using an electric signal. The surface plasmon polariton modulator can operate as a surface plasmon polariton multiplexer or a surface plasmon polariton demultiplexer.

Abstract translation: 能够局部地改变介电材料的物理性质以控制表面等离子体激元的表面等离子体激元调制器。 表面等离子体激元调制器包括介于介电层，介电层包括介于两个金属层之间的第一和第二电介质部分。 第二电介质部分具有随着施加到其上的电场，磁场，热，声波或化学和/或生物操作而变化的折射率。 表面等离子体激元调制器被配置为使用电信号来控制表面等离子体的前进方向，强度，相位等之一。 表面等离子体激元调制器可以作为表面等离子体激元多极化多路复用器或表面等离子体激元解离器来操作。

公开(公告)号：US10126146B2

公开(公告)日：2018-11-13

申请号：US14697038

申请日：2015-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hwansoo Suh ,  Insu Jeon ,  Jhinhwan Lee

IPC: G01D5/12 ,  G01B7/00 ,  G01Q10/04 ,  G01Q20/04

Abstract: A piezoelectric actuator and a method of measuring a motion by using the piezoelectric actuator are provided. The piezoelectric actuator includes: a movable member that is disposed to face the fixed member; a piezoelectric element that is disposed between the fixed member and the movable member, and configured to operate in a shear mode based on input voltages applied to the piezoelectric element and move the movable member relative to the fixed member; and a position sensor that is disposed between the piezoelectric element and the movable member, and configured to measure a motion of the movable member.

公开(公告)号：US09899473B2

公开(公告)日：2018-02-20

申请号：US15261229

申请日：2016-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngtek Oh ,  Hyeokshin Kwon ,  Hwansoo Suh ,  Insu Jeon

IPC: H01L21/00 ,  H01L29/00 ,  H01L29/06 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/66 ,  H01L29/775 ,  H01L29/16 ,  H01L21/02 ,  H01L29/78 ,  H01L29/861

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02425 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639 ,  H01L29/16 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78 ,  H01L29/861

Abstract: Provided are methods of forming nanostructures, methods of manufacturing semiconductor devices using the same, and semiconductor devices including nanostructures. A method of forming a nanostructure may include forming an insulating layer and forming a nanostructure on the insulating layer. The insulating layer may have a crystal structure. The insulating layer may include an insulating two-dimensional (2D) material. The insulating 2D material may include a hexagonal boron nitride (h-BN). The insulating layer may be formed on a catalyst metal layer. The nanostructure may include at least one of silicon (Si), germanium (Ge), and SiGe. The nanostructure may include at least one nanowire.

公开(公告)号：US09368177B2

公开(公告)日：2016-06-14

申请号：US14282470

申请日：2014-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwansoo Suh ,  Insu Jeon ,  Min-woo Kim ,  Young-jae Song ,  Min Wang ,  Qinke Wu ,  Sung-joo Lee ,  Sung-kyu Jang ,  Seong-jun Jung

IPC: H01L29/66 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22

CPC classification number: G11C11/161 ,  G11C2213/35 ,  H01L27/22 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/30

Abstract: Provided are a magnetic resistance structure, a method of manufacturing the magnetic resistance structure, and an electronic device including the magnetic resistance structure. The method of manufacturing the magnetic resistance structure includes forming a hexagonal boron nitride layer, forming a graphene layer on the boron nitride layer, forming a first magnetic material layer between the boron nitride layer and the graphene layer according to an intercalation process; and forming a second magnetic material layer on the graphene layer.

Abstract translation: 提供磁阻结构，制造磁阻结构的方法以及包括磁阻结构的电子器件。 制造磁阻结构的方法包括：形成六方氮化硼层，在氮化硼层上形成石墨烯层，根据嵌入工艺在氮化硼层和石墨烯层之间形成第一磁性材料层; 以及在所述石墨烯层上形成第二磁性材料层。