公开(公告)号：US09287116B2

公开(公告)日：2016-03-15

申请号：US14309128

申请日：2014-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwansoo Suh ,  Insu Jeon ,  Young-jae Song ,  Qinke Wu ,  Seong-jun Jung

IPC: H01L29/15 ,  H01L21/02

CPC classification number: H01L21/02527 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0262 ,  H01L21/02664

Abstract: According to example embodiments, a method of forming a multilayer graphene structure includes forming a sacrificial layer on the growth substrate, growing a first graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, and growing at least one more graphene layer on the growth substrate. The growing at least one more graphene layer includes removing at least a part of the sacrificial layer.

Abstract translation: 根据示例性实施例，形成多层石墨烯结构的方法包括在生长衬底上形成牺牲层，使用化学气相沉积（CVD）方法在牺牲层上生长第一石墨烯层，并且生长至少一个以上石墨烯层 在生长底物上。 生长至少一个以上的石墨烯层包括去除牺牲层的至少一部分。

公开(公告)号：US09368177B2

公开(公告)日：2016-06-14

申请号：US14282470

申请日：2014-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwansoo Suh ,  Insu Jeon ,  Min-woo Kim ,  Young-jae Song ,  Min Wang ,  Qinke Wu ,  Sung-joo Lee ,  Sung-kyu Jang ,  Seong-jun Jung

IPC: H01L29/66 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22

CPC classification number: G11C11/161 ,  G11C2213/35 ,  H01L27/22 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/30

Abstract: Provided are a magnetic resistance structure, a method of manufacturing the magnetic resistance structure, and an electronic device including the magnetic resistance structure. The method of manufacturing the magnetic resistance structure includes forming a hexagonal boron nitride layer, forming a graphene layer on the boron nitride layer, forming a first magnetic material layer between the boron nitride layer and the graphene layer according to an intercalation process; and forming a second magnetic material layer on the graphene layer.

Abstract translation: 提供磁阻结构，制造磁阻结构的方法以及包括磁阻结构的电子器件。 制造磁阻结构的方法包括：形成六方氮化硼层，在氮化硼层上形成石墨烯层，根据嵌入工艺在氮化硼层和石墨烯层之间形成第一磁性材料层; 以及在所述石墨烯层上形成第二磁性材料层。

公开(公告)号：US09963346B2

公开(公告)日：2018-05-08

申请号：US15017753

申请日：2016-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Hwansoo Suh ,  Youngjae Song ,  Qinke Wu ,  Sungjoo Lee ,  Minwoo Kim ,  Sangwoo Park

IPC: C23C16/34 ,  C01B21/064 ,  C23C16/02

CPC classification number: C01B21/064 ,  C23C16/02 ,  C23C16/0209 ,  C23C16/0254 ,  C23C16/342

Abstract: A seamless hexagonal h-BN atomic monolayer thin film has a pseudo-single crystal structure including a plurality of h-BN grains that are seamlessly merged. Each of the h-BN grains has a dimension in a range from about 10 μm to about 1,000 μm. The seamless hexagonal boron nitride (h-BN) atomic monolayer thin film may be fabricated by a process including pre-annealing a metal thin film at a first temperature in a chamber while supplying hydrogen gas to the chamber; supplying nitrogen source gas and boron source gas to the chamber; and forming the seamless h-BN atomic monolayer thin film having a pseudo-single crystal atomic monolayer structure having a grain dimension in a range from about 10 μm to about 1,000 μm by annealing the pre-annealed metal thin film at a second temperature.