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公开(公告)号：US09287116B2
公开(公告)日：2016-03-15
申请号：US14309128
申请日：2014-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hwansoo Suh , Insu Jeon , Young-jae Song , Qinke Wu , Seong-jun Jung
CPC classification number: H01L21/02527 , H01L21/02425 , H01L21/02458 , H01L21/02505 , H01L21/0262 , H01L21/02664
Abstract: According to example embodiments, a method of forming a multilayer graphene structure includes forming a sacrificial layer on the growth substrate, growing a first graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, and growing at least one more graphene layer on the growth substrate. The growing at least one more graphene layer includes removing at least a part of the sacrificial layer.
Abstract translation: 根据示例性实施例，形成多层石墨烯结构的方法包括在生长衬底上形成牺牲层，使用化学气相沉积（CVD）方法在牺牲层上生长第一石墨烯层，并且生长至少一个以上石墨烯层 在生长底物上。 生长至少一个以上的石墨烯层包括去除牺牲层的至少一部分。
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2.发明授权公开(公告)号：US09368177B2
公开(公告)日：2016-06-14
申请号：US14282470
申请日：2014-05-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hwansoo Suh , Insu Jeon , Min-woo Kim , Young-jae Song , Min Wang , Qinke Wu , Sung-joo Lee , Sung-kyu Jang , Seong-jun Jung
CPC classification number: G11C11/161 , G11C2213/35 , H01L27/22 , H01L27/222 , H01L43/08 , H01L43/12 , Y10T428/30
Abstract: Provided are a magnetic resistance structure, a method of manufacturing the magnetic resistance structure, and an electronic device including the magnetic resistance structure. The method of manufacturing the magnetic resistance structure includes forming a hexagonal boron nitride layer, forming a graphene layer on the boron nitride layer, forming a first magnetic material layer between the boron nitride layer and the graphene layer according to an intercalation process; and forming a second magnetic material layer on the graphene layer.
Abstract translation: 提供磁阻结构，制造磁阻结构的方法以及包括磁阻结构的电子器件。 制造磁阻结构的方法包括：形成六方氮化硼层，在氮化硼层上形成石墨烯层，根据嵌入工艺在氮化硼层和石墨烯层之间形成第一磁性材料层; 以及在所述石墨烯层上形成第二磁性材料层。
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