Invention Grant
- Patent Title: Through silicon via and process thereof
- Patent Title (中): 通过硅通孔及其工艺
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Application No.: US13900565Application Date: 2013-05-23
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Publication No.: US09287173B2Publication Date: 2016-03-15
- Inventor: Chien-Li Kuo , Chun-Hung Chen , Ming-Tse Lin , Yung-Chang Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48
Abstract:
A through silicon via includes a substrate and a conductive plug. The substrate has a hole in a side. The conductive plug is disposed in the hole, and the conductive plug having an upper part protruding from the side, wherein the upper part has a top part and a bottom part, and the top part is finer than the bottom part. Moreover, a through silicon via process formed said through silicon via is also provided, which includes the following step. A hole is formed in a substrate from a side. A first conductive material is formed to cover the hole and the side. A patterned photoresist is formed to cover the side but exposing the hole. A second conductive material is formed on the exposed first conductive material. The patterned photoresist is removed. The first conductive material on the side is removed to form a conductive plug in the hole.
Public/Granted literature
- US20140346645A1 THROUGH SILICON VIA AND PROCESS THEREOF Public/Granted day:2014-11-27
Information query
IPC分类:
