Resonant clocking for three-dimensional stacked devices. An embodiment of an apparatus includes a stack including integrated circuit dies; and through silicon vias through at least one of the dies, wherein at least a first through silicon via of the through silicon vias includes a capacitive structure or an inductive structure, the first through silicon via being formed in a first die of the plurality of dies. The apparatus includes a resonant circuit, the first through silicon via used as a first circuit element of the resonant circuit.