Invention Grant
- Patent Title: Dual-mode transistor devices and methods for operating same
- Patent Title (中): 双模晶体管器件及其操作方法
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Application No.: US14163639Application Date: 2014-01-24
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Publication No.: US09287406B2Publication Date: 2016-03-15
- Inventor: Hang-Ting Lue , Wei-Chen Chen
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/739 ; H01L29/423 ; H01L27/092 ; G11C16/12 ; G11C16/14 ; G11C16/26 ; H01L27/115

Abstract:
A dual-mode transistor structure comprises a semiconductor body. The semiconductor body of the device includes a channel region, a p-type terminal region (operable as a source or drain) adjacent a first side of the channel region and an n-type terminal region (operable as a source or drain) adjacent a second side of the channel region. A gate insulator is disposed on a surface of the semiconductor body over the channel region. A gate is disposed on the gate insulator over the channel region. A first assist gate is disposed on a first side of the gate, and a second assist gate is disposed on a second side of the gate. Optionally, a back gate can be included beneath the channel region. Biasing the assist gates can be used to select n-channel or p-channel modes in a single device.
Public/Granted literature
- US20140361369A1 DUAL-MODE TRANSISTOR DEVICES AND METHODS FOR OPERATING SAME Public/Granted day:2014-12-11
Information query
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