Invention Grant
US09293333B2 FinFET work function metal formation 有权
FinFET工作功能金属形成

FinFET work function metal formation
Abstract:
An improved method and structure for fabrication of replacement metal gate (RMG) field effect transistors is disclosed. P-type field effect transistor (PFET) gate cavities are protected while N work function metals are deposited in N-type field effect transistor (NFET) gate cavities.
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