Invention Grant
- Patent Title: FinFET work function metal formation
- Patent Title (中): FinFET工作功能金属形成
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Application No.: US13944403Application Date: 2013-07-17
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Publication No.: US09293333B2Publication Date: 2016-03-22
- Inventor: Hui Zang , Hoon Kim
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries Inc.
- Current Assignee: GlobalFoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/49 ; H01L29/66
Abstract:
An improved method and structure for fabrication of replacement metal gate (RMG) field effect transistors is disclosed. P-type field effect transistor (PFET) gate cavities are protected while N work function metals are deposited in N-type field effect transistor (NFET) gate cavities.
Public/Granted literature
- US20150021704A1 FINFET WORK FUNCTION METAL FORMATION Public/Granted day:2015-01-22
Information query
IPC分类:
