Invention Grant
US09293387B2 Film for flip chip type semiconductor back surface, dicing tape-integrated film for semiconductor back surface, process for producing semiconductor device, and flip chip type semiconductor device
有权
用于倒装芯片型半导体背表面的薄膜，用于半导体背表面的切割带集成薄膜，用于制造半导体器件的工艺和倒装芯片型半导体器件
- Patent Title: Film for flip chip type semiconductor back surface, dicing tape-integrated film for semiconductor back surface, process for producing semiconductor device, and flip chip type semiconductor device
- Patent Title (中): 用于倒装芯片型半导体背表面的薄膜，用于半导体背表面的切割带集成薄膜，用于制造半导体器件的工艺和倒装芯片型半导体器件
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Application No.: US13191791Application Date: 2011-07-27
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Publication No.: US09293387B2Publication Date: 2016-03-22
- Inventor: Yusuke Komoto , Naohide Takamoto , Goji Shiga , Fumiteru Asai
- Applicant: Yusuke Komoto , Naohide Takamoto , Goji Shiga , Fumiteru Asai
- Applicant Address: JP Osaka
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Osaka
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-169501 20100728
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L23/31 ; H01L21/683 ; C09J163/00 ; H01L23/00
Abstract:
The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, in which the film for flip chip type semiconductor back surface before thermal curing has, at the thermal curing thereof, a volume contraction ratio within a range of 23° C. to 165° C. of 100 ppm/° C. to 400 ppm/° C.
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