公开(公告)号：US08722517B2

公开(公告)日：2014-05-13

申请号：US13088738

申请日：2011-04-18

申请人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai ,  Toshimasa Sugimura

发明人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai ,  Toshimasa Sugimura

IPC分类号： H01L21/00

CPC分类号： H01L21/6836 ,  C09J7/22 ,  C09J7/38 ,  C09J2203/326 ,  C09J2205/31 ,  H01L21/78 ,  H01L23/544 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2223/54486 ,  H01L2224/16225 ,  H01L2924/12042 ,  Y10T428/1467 ,  Y10T428/1471 ,  Y10T428/28 ,  H01L2924/00

摘要： The present invention provides a dicing tape-integrated film for semiconductor back surface, including a film for flip chip type semiconductor back surface for protecting a back surface of a semiconductor element flip chip-connected onto an adherend, and a dicing tape, the dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material, the film for flip chip type semiconductor back surface being formed on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer whose pressure-sensitive adhesive force toward the film for flip chip type semiconductor back surface is decreased by irradiation with a radiation ray.

摘要翻译： 本发明提供了一种用于半导体背面的切割带集成膜，包括用于倒装芯片型半导体背表面的膜，用于保护连接到被粘物上的半导体元件倒装芯片的后表面和切割带，切割带 包括基材和设置在基材上的压敏粘合剂层，在压敏粘合剂层上形成用于倒装芯片型半导体背表面的膜，其中压敏粘合剂层是可辐射固化压力 敏感粘合剂层，其通过用辐射线照射而降低了对于倒装芯片型半导体背表面的膜的压敏粘合力。

公开(公告)号：US08679931B2

公开(公告)日：2014-03-25

申请号：US13191697

申请日：2011-07-27

申请人： Fumiteru Asai ,  Goji Shiga ,  Naohide Takamoto

发明人： Fumiteru Asai ,  Goji Shiga ,  Naohide Takamoto

IPC分类号： H01L21/00 ,  H01L21/331

CPC分类号： B32B7/06 ,  B32B7/02 ,  B32B7/12 ,  C09J7/20 ,  C09J201/00 ,  H01L21/563 ,  H01L21/68 ,  H01L21/6836 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2223/54486 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/8101 ,  H01L2224/81815 ,  H01L2224/83007 ,  H01L2224/83104 ,  H01L2924/12042 ,  Y10T428/24942 ,  Y10T428/26 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, in which a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, and in which the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm.

摘要翻译： 本发明涉及一种半导体背面用切割带一体膜，其特征在于，包括：依次层叠有基材层，第一粘合剂层和第二粘合剂层的切割带， 在第一粘合剂层和第二压敏粘合剂层之间的剥离强度Y大于切割带的第二粘合剂层上的剥离强度X的层叠在半导体背面的半导体背面的膜， 第二粘合剂层和半导体背面用膜，剥离强度X为0.01〜0.2N / 20mm，剥离强度Y为0.2〜10N / 20mm。

公开(公告)号：US08492907B2

公开(公告)日：2013-07-23

申请号：US13186000

申请日：2011-07-19

申请人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

发明人： Naohide Takamoto ,  Goji Shiga ,  Fumiteru Asai

IPC分类号： H01L23/48 ,  H01L21/50 ,  B32B3/00

CPC分类号： H01L21/6835 ,  C09J163/00 ,  H01L21/561 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3157 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2223/54406 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16258 ,  H01L2224/16268 ,  H01L2224/2919 ,  H01L2224/73204 ,  H01L2224/81002 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/831 ,  H01L2224/83862 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/15788 ,  Y10T428/24802 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099

摘要： The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film having a light transmittance at a wavelength of 532 nm or 1064 nm of 20% or less, and having a contrast between a marking part and a part other than the marking part after laser marking of 20% or more.

摘要翻译： 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在连接到被粘物上的半导体元件倒装芯片的背面上，该膜具有波长为532nm或1064nm的透光率为20 ％以下，并且在激光标记20％以上之后，在标记部和标记部以外的部分之间具有对比度。

公开(公告)号：US08455302B2

公开(公告)日：2013-06-04

申请号：US13558540

申请日：2012-07-26

申请人： Goji Shiga ,  Naohide Takamoto ,  Fumiteru Asai

发明人： Goji Shiga ,  Naohide Takamoto ,  Fumiteru Asai

IPC分类号： H01L21/00

CPC分类号： H01L21/6836 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/3164 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68386 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/92125 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/15788 ,  Y10T428/24959 ,  Y10T428/265 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/00

摘要： The present invention relates to a dicing tape-integrated film for semiconductor back surface including: a dicing tape including a base material and a pressure-sensitive adhesive layer laminated in this order, and a film for semiconductor back surface provided on the pressure-sensitive adhesive layer of the dicing tape, where the pressure-sensitive adhesive layer has a thickness of from 20 μm to 40 μm.

摘要翻译： 本发明涉及一种半导体背面用切割带一体化膜，其特征在于，具有：依次层叠有基材和粘合剂层的切割带和设置在所述压敏粘合剂上的半导体背面用膜 层，其中压敏粘合剂层的厚度为20μm至40μm。

公开(公告)号：US08388786B2

公开(公告)日：2013-03-05

申请号：US12720704

申请日：2010-03-10

申请人： Takashi Habu ,  Fumiteru Asai ,  Tomokazu Takahashi ,  Akinori Nishio ,  Toshio Shintani

发明人： Takashi Habu ,  Fumiteru Asai ,  Tomokazu Takahashi ,  Akinori Nishio ,  Toshio Shintani

IPC分类号： B32B37/00

CPC分类号： H01L21/304 ,  C09J133/066 ,  C09J2201/606 ,  C09J2203/326 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/3025

摘要： The present invention provides a substrate-less pressure-sensitive adhesive sheet for protection of semiconductor wafer, which is to be stuck to a front surface of a semiconductor wafer in grinding a back surface of the semiconductor wafer, the pressure-sensitive adhesive sheet consisting of a pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer is formed of a UV-curable pressure-sensitive adhesive containing a polymer composed mainly of an acrylic monomer polymerizable compound, the pressure-sensitive adhesive force of a surface of the pressure-sensitive adhesive layer to be stuck to the front surface of the semiconductor wafer is larger than the pressure-sensitive adhesive force of the opposite surface thereof, and the pressure-sensitive adhesive layer has an initial elastic modulus of from 0.01 MPa to 500 MPa.

摘要翻译： 本发明提供一种用于保护半导体晶片的无基板用粘合片，其将在半导体晶片的背面磨削时粘贴到半导体晶片的前表面，该压敏粘合片由 压敏粘合剂层，其中压敏粘合剂层由含有主要由丙烯酸单体可聚合化合物组成的聚合物的UV可固化压敏粘合剂形成，压力表面的压敏粘合力 要粘附到半导体晶片的前表面的敏感粘合剂层大于其相对表面的压敏粘合力，并且压敏粘合剂层的初始弹性模量为0.01MPa至500MPa。

公开(公告)号：US08278151B2

公开(公告)日：2012-10-02

申请号：US12969959

申请日：2010-12-16

申请人： Shuhei Murata ,  Takeshi Matsumura ,  Koji Mizuno ,  Fumiteru Asai

发明人： Shuhei Murata ,  Takeshi Matsumura ,  Koji Mizuno ,  Fumiteru Asai

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  B32B7/12 ,  C09J7/22 ,  C09J7/38 ,  C09J2201/36 ,  C09J2203/326 ,  H01L24/45 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/3025 ,  Y10T428/24331 ,  Y10T428/24777 ,  Y10T428/24802 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention aims to provide a tape for holding a chip that makes pasting and peeling of a chip-shaped workpiece easy. It is a tape for holding a chip having a configuration in which a pressure-sensitive adhesive layer is formed on a base material, wherein the pressure-sensitive adhesive layer has a chip-shaped workpiece pasting region onto which a chip-shaped workpiece is pasted and a frame pasting region onto which a mount frame is pasted, and that is used by pasting the mount frame to the frame pasting region, wherein the 180-degree peeling adhesive power of the pressure-sensitive adhesive layer to a silicon mirror wafer at the frame pasting region is 5 times or more the 180-degree peeling adhesive power of the pressure-sensitive adhesive layer to a silicon mirror wafer at the chip-shaped workpiece pasting region.

摘要翻译： 本发明的目的在于提供一种用于保持芯片的带状物，其使得片状工件的粘贴和剥离变得容易。 用于保持具有在基材上形成压敏粘合剂层的构造的芯片的胶带，其中粘合剂层具有将片状工件粘贴到其上的切屑状工件粘贴区域 以及粘贴安装框架的框架粘贴区域，并且通过将安装框架粘贴到框架粘贴区域来使用，其中压敏粘合剂层的180度剥离粘合力到硅镜晶片 框状粘贴区域是片状工件粘贴区域的粘合剂层向硅镜面晶片的180度剥离粘合力的5倍以上。

公开(公告)号：US20120056338A1

公开(公告)日：2012-03-08

申请号：US13223629

申请日：2011-09-01

申请人： Takashi HABU ,  Fumiteru ASAI ,  Tomokazu TAKAHASHI ,  Eiichi IMOTO ,  Yuta SHIMAZAKI

发明人： Takashi HABU ,  Fumiteru ASAI ,  Tomokazu TAKAHASHI ,  Eiichi IMOTO ,  Yuta SHIMAZAKI

IPC分类号： H01L23/29

CPC分类号： H01L21/67132 ,  C08G18/4854 ,  C08G18/672 ,  C08G18/757 ,  C08G2170/40 ,  C09J7/10 ,  C09J175/16 ,  C09J2203/326 ,  C09J2475/00 ,  C08G18/48

摘要： The present invention provides a pressure-sensitive adhesive sheet for protecting a semiconductor wafer, which does not cause curve (warpage) in the semiconductor wafer, when the semiconductor wafer is ground, is excellent in followability to a pattern, has adequate stress dispersibility in a grinding operation, suppresses the crack in a wafer and chipping in a wafer edge, and does not leave a residue of a tackiness agent on the surface of the wafer. The protective sheet has one face having tackiness, does not have an interface existing between a substrate and the tackiness agent and is made of one layer, and the pressure-sensitive adhesive sheet has different tack strengths on both faces from each other.

摘要翻译： 本发明提供一种用于保护半导体晶片的压敏粘合片，其在半导体晶片被研磨时不引起半导体晶片的弯曲（翘曲），对图案的追随性优异，在 研磨操作，抑制晶片中的裂纹和晶片边缘的碎裂，并且不会在晶片的表面上留下粘合剂残留物。 保护片具有一个具有粘性的面，在基材和粘合剂之间不存在界面，并且由一层制成，并且该粘合片在两个表面上具有不同的粘着强度。

公开(公告)号：US20120028418A1

公开(公告)日：2012-02-02

申请号：US13191697

申请日：2011-07-27

申请人： Fumiteru ASAI ,  Goji SHIGA ,  Naohide TAKAMOTO

发明人： Fumiteru ASAI ,  Goji SHIGA ,  Naohide TAKAMOTO

IPC分类号： H01L21/78 ,  B32B33/00

CPC分类号： B32B7/06 ,  B32B7/02 ,  B32B7/12 ,  C09J7/20 ,  C09J201/00 ,  H01L21/563 ,  H01L21/68 ,  H01L21/6836 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2223/54486 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/8101 ,  H01L2224/81815 ,  H01L2224/83007 ,  H01L2224/83104 ,  H01L2924/12042 ,  Y10T428/24942 ,  Y10T428/26 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, in which a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, and in which the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm.

摘要翻译： 本发明涉及一种半导体背面用切割带一体膜，其特征在于，包括：依次层叠有基材层，第一粘合剂层和第二粘合剂层的切割带， 在第一粘合剂层和第二压敏粘合剂层之间的剥离强度Y大于切割带的第二粘合剂层上的剥离强度X的层叠在半导体背面的半导体背面的膜， 第二粘合剂层和半导体背面用膜，剥离强度X为0.01〜0.2N / 20mm，剥离强度Y为0.2〜10N / 20mm。

公开(公告)号：US20120028050A1

公开(公告)日：2012-02-02

申请号：US13191574

申请日：2011-07-27

申请人： Goji SHIGA ,  Naohide TAKAMOTO ,  Fumiteru ASAI

发明人： Goji SHIGA ,  Naohide TAKAMOTO ,  Fumiteru ASAI

IPC分类号： B32B27/38 ,  C08L63/06 ,  C08L77/06 ,  C08L67/02 ,  C08L69/00 ,  C08L71/10 ,  C08L63/04 ,  C08L63/02 ,  C08L79/08 ,  C08L61/08 ,  C08L31/04 ,  C08L33/08 ,  C08L33/02 ,  C08L7/00 ,  C08L11/00 ,  C08L9/00 ,  C08L23/22 ,  C08L33/14 ,  C08L35/02 ,  C08L43/02 ,  B26D3/00

CPC分类号： C08G59/621 ,  B32B27/38 ,  C08K3/36 ,  C08L63/00 ,  C09J163/00 ,  H01L2224/16225 ,  Y10T83/04 ,  Y10T428/31511

摘要： The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface having a ratio of A/B falling within a range of 1 to 8×103 (%/GPa), in which A is an elongation ratio (%) of the film for flip chip type semiconductor back surface at 23° C. before thermal curing and B is a tensile storage modulus (GPa) of the film for flip chip type semiconductor back surface at 23° C. before thermal curing.

摘要翻译： 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在连接到被粘物上的半导体元件倒装芯片的背面上，该倒装芯片型半导体背表面的膜具有A / B比 在1〜8×10 3（％/ GPa）的范围内，其中A是在热固化之前的23℃下的倒装芯片型半导体背表面的膜的伸长率（％），B是拉伸储能模量 （GPa），用于倒装芯片型半导体背表面，在23℃下热固化。

公开(公告)号：US20120025400A1

公开(公告)日：2012-02-02

申请号：US13191791

申请日：2011-07-27

申请人： Yusuke KOMOTO ,  Naohide TAKAMOTO ,  Goji SHIGA ,  Fumiteru ASAI

发明人： Yusuke KOMOTO ,  Naohide TAKAMOTO ,  Goji SHIGA ,  Fumiteru ASAI

IPC分类号： H01L23/48 ,  B32B27/00 ,  C09J133/12 ,  C09J11/02 ,  C09J163/00 ,  C09J171/10 ,  H01L21/78 ,  B32B7/12

CPC分类号： H01L23/3157 ,  C09J163/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/68386 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01056 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/31504 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099 ,  H01L2924/00

摘要： The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, in which the film for flip chip type semiconductor back surface before thermal curing has, at the thermal curing thereof, a volume contraction ratio within a range of 23° C. to 165° C. of 100 ppm/° C. to 400 ppm/° C.

摘要翻译： 本发明涉及一种用于倒装芯片型半导体背表面的薄膜，该薄膜形成在半导体元件倒装芯片的背面上，该半导体元件倒装芯片连接到被粘物上，其中在热固化之前用于倒装芯片型半导体背表面的膜， 其热固化，体积收缩率在23℃至165℃的范围内为100ppm /℃至400ppm /℃。