Invention Grant
- Patent Title: Semiconductor device having an oxide semiconductor layer
- Patent Title (中): 具有氧化物半导体层的半导体器件
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Application No.: US14141831Application Date: 2013-12-27
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Publication No.: US09293598B2Publication Date: 2016-03-22
- Inventor: Shunpei Yamazaki , Hideomi Suzawa , Hiroshi Fujiki , Hiromichi Godo , Yasumasa Yamane
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2012-288947 20121228
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/45 ; H01L29/49
Abstract:
The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.
Public/Granted literature
- US20140183529A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-07-03
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