公开(公告)号：US12148835B2

公开(公告)日：2024-11-19

申请号：US18211652

申请日：2023-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Hirokazu Watanabe ,  Yuhei Sato ,  Yasumasa Yamane ,  Daisuke Matsubayashi

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US11211461B2

公开(公告)日：2021-12-28

申请号：US16693974

申请日：2019-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke Yamaguchi ,  Shinobu Kawaguchi ,  Yoshihiro Komatsu ,  Toshikazu Ohno ,  Yasumasa Yamane ,  Tomosato Kanagawa

IPC: H01L29/26 ,  H01L27/108

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

公开(公告)号：US10964787B2

公开(公告)日：2021-03-30

申请号：US16732686

申请日：2020-01-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tsutomu Murakawa ,  Toshihiko Takeuchi ,  Hiroki Komagata ,  Hiromi Sawai ,  Yasumasa Yamane ,  Shota Sambonsuge ,  Kazuya Sugimoto ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/105 ,  H01L29/51 ,  H01L29/66 ,  H01L27/12 ,  H01L29/49 ,  H01L29/24 ,  H01L29/788

Abstract: A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.

公开(公告)号：US10910407B2

公开(公告)日：2021-02-02

申请号：US16478244

申请日：2018-01-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori Ando ,  Takashi Hamada ,  Yasumasa Yamane

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: A high-performance semiconductor device is provided. The semiconductor device includes a transistor, an insulating film over the transistor, an electrode, and a metal oxide over the insulating film. The transistor includes a first gate electrode, a first gate insulating film over the first gate electrode, an oxide over the first gate insulating film, a source electrode and a drain electrode electrically connected to the oxide, a second gate insulating film over the oxide, and a second gate electrode over the second gate insulating film. The electrode includes a region in contact with the insulating film. The first gate insulating film is in contact with the insulating film. The thicknesses of the insulating film over the second gate electrode, the insulating film over the source electrode, and the insulating film over the drain electrode are substantially the same, and the insulating film includes excess oxygen.

公开(公告)号：US10032928B2

公开(公告)日：2018-07-24

申请号：US15417266

申请日：2017-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Takahisa Ishiyama ,  Kenichi Okazaki ,  Chiho Kawanabe ,  Masashi Oota ,  Noritaka Ishihara

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

公开(公告)号：US09698277B2

公开(公告)日：2017-07-04

申请号：US14963945

申请日：2015-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Ryo Tokumaru ,  Yuhei Sato ,  Kazuhiro Tsutsui

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  C23C14/08 ,  C23C14/34

CPC classification number: H01L29/7869 ,  C23C14/08 ,  C23C14/3414 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.

公开(公告)号：US09343581B2

公开(公告)日：2016-05-17

申请号：US14580651

申请日：2014-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Hideomi Suzawa ,  Yasumasa Yamane ,  Yuhei Sato ,  Sachiaki Tezuka

IPC: H01L29/786 ,  H01L29/16 ,  H01L27/088 ,  H01L27/06

Abstract: To provide a transistor with stable electrical characteristics, a transistor with a low off-state current, a transistor with a high on-state current, a semiconductor device including the transistor, or a durable semiconductor device. The semiconductor device includes a first transistor using silicon, an aluminum oxide film over the first transistor, and a second transistor using an oxide semiconductor over the aluminum oxide film. The oxide semiconductor has a lower hydrogen concentration than silicon.

公开(公告)号：US20150179803A1

公开(公告)日：2015-06-25

申请号：US14571981

申请日：2014-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yutaka Okazaki ,  Naoki Okuno ,  Takahisa Ishiyama

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78696

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

Abstract translation: 提供具有高导通电流的晶体管。 半导体器件包括含有过量氧的第一绝缘体，在第一绝缘体上的第一氧化物半导体，第一氧化物半导体上的第二氧化物半导体，在第二氧化物半导体之上并且彼此分离的第一导体和第二导体 与第一氧化物半导体的侧表面接触的第三氧化物半导体，第二氧化物半导体的顶表面和侧表面，第一导体的顶表面和第二导体的顶表面，第二绝缘体 第三氧化物半导体以及与第二绝缘体和第三氧化物半导体相对的第二氧化物半导体的顶表面和侧表面的第三导体。 第一氧化物半导体具有比第三氧化物半导体更高的透氧性。

公开(公告)号：US20140225105A1

公开(公告)日：2014-08-14

申请号：US14176472

申请日：2014-02-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Yasumasa Yamane ,  Hideomi Suzawa ,  Daisuke Matsubayashi ,  Shunpei Yamazaki

IPC: H01L29/786

CPC classification number: H01L29/78696 ,  H01L29/7869

Abstract: A transistor or the like having excellent electrical characteristics is provided. A semiconductor device includes a gate electrode; a gate insulating film in contact with the gate electrode; and a multilayer film which is in contact with the gate insulating film and includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer in the order from a side farthest from the gate insulating film. The first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer each contain indium, an element M (aluminum, gallium, yttrium, or tin), and zinc. The first oxide semiconductor layer has a thickness greater than or equal to 20 nm and less than or equal to 200 nm. The third oxide semiconductor layer has a thickness greater than or equal to 0.3 nm and less than 10 nm.

Abstract translation: 提供具有优异电特性的晶体管等。 半导体器件包括栅电极; 与栅电极接触的栅极绝缘膜; 以及与所述栅极绝缘膜接触并且从距离所述栅极绝缘膜最远的一侧依次包括第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层的多层膜。 第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层各自含有铟，元素M（铝，镓，钇或锡）和锌。 第一氧化物半导体层具有大于或等于20nm且小于或等于200nm的厚度。 第三氧化物半导体层的厚度大于或等于0.3nm且小于10nm。

公开(公告)号：US20140175435A1

公开(公告)日：2014-06-26

申请号：US14137476

申请日：2013-12-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Hirokazu Watanabe ,  Yuhei Sato ,  Yasumasa Yamane ,  Daisuke Matsubayashi

IPC: H01L29/786

CPC classification number: H01L29/78618 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

Abstract translation: 提供了在氧化物半导体的沟道形成区域中具有减少的氧空位量的半导体器件。 此外，提供了包括氧化物半导体并具有改善的电特性的半导体器件。 此外，提供了制造半导体器件的方法。 形成氧化物半导体膜; 在氧化物半导体膜和导电膜之间形成低电阻区域的同时，在氧化物半导体膜上形成导电膜; 处理导电膜以形成源电极和漏电极; 并且在源电极和漏极之间的低电阻区域添加氧，使得形成具有比低电阻区域更高的电阻的沟道形成区域，并且形成第一低电阻区域和第二低电阻 形成沟道形成区域所在的区域。