公开(公告)号：US11107929B2

公开(公告)日：2021-08-31

申请号：US16690891

申请日：2019-11-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Hideomi Suzawa

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/417

摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first insulator, a second insulator over the first insulator, a third insulator over the second insulator, a fourth insulator and a first conductor over the third insulator, a fifth insulator over the fourth insulator and the first conductor, a first oxide over the fifth insulator, a second conductor and a third conductor over the first oxide, a second oxide over the first oxide and between the second conductor and the third conductor, a sixth insulator over the second oxide, and a fourth conductor over the sixth insulator. The hydrogen concentration of the second insulator is lower than that of the first insulator. The hydrogen concentration of the third insulator is lower than that of the second insulator.

公开(公告)号：US10388797B2

公开(公告)日：2019-08-20

申请号：US15908851

申请日：2018-03-01

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Hideomi Suzawa

IPC分类号： H01L29/786 ,  H01L27/06 ,  H01L27/1156 ,  H01L27/12 ,  H01L29/16 ,  H01L29/78 ,  H01L29/06 ,  H01L29/24

摘要： Provided is a highly integrated semiconductor device, a semiconductor device with large storage capacity with respect to an area occupied by a capacitor, a semiconductor device capable of high-speed writing, a semiconductor device capable of high-speed reading, a semiconductor device with low power consumption, or a highly reliable semiconductor device. The semiconductor device includes a first transistor, a second transistor, and a capacitor. A conductor penetrates and connects the first transistor, the capacitor, and the second transistor. An insulator is provided on a side surface of the conductor that penetrates the capacitor.

公开(公告)号：US10217870B2

公开(公告)日：2019-02-26

申请号：US14926737

申请日：2015-10-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Sachiaki Tezuka ,  Hideomi Suzawa ,  Akihisa Shimomura ,  Tetsuhiro Tanaka

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66

摘要： A highly reliable semiconductor device including an oxide semiconductor is provided. Oxygen is supplied from a base insulating layer provided below an oxide semiconductor layer to a channel formation region, whereby oxygen vacancies which might be generated in the channel formation region are filled. Further, a protective insulating layer containing a small amount of hydrogen and functioning as a barrier layer having a low permeability to oxygen is formed over the gate electrode layer so as to cover side surfaces of an oxide layer and a gate insulating layer that are provided over the oxide semiconductor layer, whereby release of oxygen from the gate insulating layer and/or the oxide layer is prevented and generation of oxygen vacancies in a channel formation region is prevented.

公开(公告)号：US10014413B2

公开(公告)日：2018-07-03

申请号：US15618480

申请日：2017-06-09

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Yutaka Okazaki

IPC分类号： H01L29/12 ,  H01L29/10 ,  H01L29/786 ,  H01L29/51 ,  H01L27/105 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49 ,  H01L29/423

CPC分类号： H01L29/78606 ,  H01L27/1052 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： To provide a semiconductor device that includes an oxide semiconductor and is miniaturized while keeping good electrical properties. In the semiconductor device, an oxide semiconductor layer filling a groove is surrounded by insulating layers including an aluminum oxide film containing excess oxygen. Excess oxygen contained in the aluminum oxide film is supplied to the oxide semiconductor layer, in which a channel is formed, by heat treatment in a manufacturing process of the semiconductor device. Moreover, the aluminum oxide film forms a barrier against oxygen and hydrogen, which inhibits the removal of oxygen from the oxide semiconductor layer surrounded by the insulating layers including an aluminum oxide film and the entry of impurities such as hydrogen in the oxide semiconductor layer. Thus, a highly purified intrinsic oxide semiconductor layer can be obtained. The threshold voltage is controlled effectively by gate electrode layers formed over and under the oxide semiconductor layer.

公开(公告)号：US10008587B2

公开(公告)日：2018-06-26

申请号：US14459597

申请日：2014-08-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Toshihiko Saito ,  Takehisa Hatano ,  Hideomi Suzawa ,  Shinya Sasagawa ,  Junichi Koezuka ,  Yuichi Sato ,  Shinji Ohno

IPC分类号： H01L21/336 ,  H01L21/311 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/02 ,  H01L21/31

CPC分类号： H01L29/66969 ,  H01L21/02488 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869

摘要： A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.

公开(公告)号：US09991397B2

公开(公告)日：2018-06-05

申请号：US15583011

申请日：2017-05-01

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Yutaka Okazaki

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/24

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/517 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696

摘要： To provide a semiconductor device that includes an oxide semiconductor and is miniaturized while keeping good electrical properties. In the semiconductor device, an oxide semiconductor layer is surrounded by an insulating layer including an aluminum oxide film containing excess oxygen. Excess oxygen in the aluminum oxide film is supplied to the oxide semiconductor layer including a channel by heat treatment in a manufacturing process of the semiconductor device. Furthermore, the aluminum oxide film forms a barrier against oxygen and hydrogen. It is thus possible to suppress the removal of oxygen from the oxide semiconductor layer surrounded by the insulating layer including an aluminum oxide film, and the entry of impurities such as hydrogen into the oxide semiconductor layer; as a result, the oxide semiconductor layer can be made highly intrinsic. In addition, gate electrode layers over and under the oxide semiconductor layer control the threshold voltage effectively.

公开(公告)号：US09917107B2

公开(公告)日：2018-03-13

申请号：US14873863

申请日：2015-10-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Koji Ono ,  Hideomi Suzawa

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L27/12 ,  C23F4/00 ,  H01L21/3213 ,  H01L21/768 ,  H01B1/02 ,  H01B5/14 ,  H01B13/00 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49

CPC分类号： H01L27/1214 ,  C23F4/00 ,  H01B1/02 ,  H01B5/14 ,  H01B13/0006 ,  H01B13/0036 ,  H01L21/32136 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/124 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/495 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

公开(公告)号：US09882059B2

公开(公告)日：2018-01-30

申请号：US14571981

申请日：2014-12-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yutaka Okazaki ,  Naoki Okuno ,  Takahisa Ishiyama

IPC分类号： H01L29/786 ,  H01L29/417

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78696

摘要： To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US09768320B2

公开(公告)日：2017-09-19

申请号：US15184213

申请日：2016-06-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Akihisa Shimomura ,  Tetsuhiro Tanaka ,  Sachiaki Tezuka

IPC分类号： H01L29/49 ,  H01L29/786 ,  H01L29/78 ,  H01L29/26 ,  H01L29/10 ,  H01L29/417

CPC分类号： H01L29/7869 ,  H01L29/105 ,  H01L29/26 ,  H01L29/41733 ,  H01L29/78 ,  H01L29/78693 ,  H01L29/78696

摘要： Disclosed is a semiconductor device including two oxide semiconductor layers, where one of the oxide semiconductor layers has an n-doped region while the other of the oxide semiconductor layers is substantially i-type. The semiconductor device includes the two oxide semiconductor layers sandwiched between a pair of oxide layers which have a common element included in any of the two oxide semiconductor layers. A double-well structure is formed in a region including the two oxide semiconductor layers and the pair of oxide layers, leading to the formation of a channel formation region in the n-doped region. This structure allows the channel formation region to be surrounded by an i-type oxide semiconductor, which contributes to the production of a semiconductor device that is capable of feeding enormous current.

公开(公告)号：US09660098B2

公开(公告)日：2017-05-23

申请号：US14883732

申请日：2015-10-15

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Sachiaki Tezuka ,  Tetsuhiro Tanaka ,  Toshihiko Takeuchi ,  Hideomi Suzawa ,  Suguru Hondo

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/49 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/423

CPC分类号： H01L29/7869 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/1054 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78

摘要： Stable electrical characteristics and high reliability are provided for a miniaturized semiconductor device including an oxide semiconductor, and the semiconductor device is manufactured. The semiconductor device includes a base insulating layer; an oxide stack which is over the base insulating layer and includes an oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide stack; a gate insulating layer over the oxide stack, the source electrode layer, and the drain electrode layer; a gate electrode layer over the gate insulating layer; and an interlayer insulating layer over the gate electrode layer. In the semiconductor device, the defect density in the oxide semiconductor layer is reduced.