Invention Grant
- Patent Title: CMOS based RF antenna switch
- Patent Title (中): 基于CMOS的射频天线开关
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Application No.: US14034081Application Date: 2013-09-23
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Publication No.: US09294050B2Publication Date: 2016-03-22
- Inventor: Alexander Mostov , Yaron Hasson
- Applicant: DSP Group, Ltd.
- Applicant Address: IL Herzelia
- Assignee: DSP Group Ltd.
- Current Assignee: DSP Group Ltd.
- Current Assignee Address: IL Herzelia
- Agency: Zaretsky Patent Group PC
- Agent Howard Zaretsky
- Main IPC: H03F1/56
- IPC: H03F1/56 ; H01F38/14 ; H03F3/213 ; H03F3/195 ; H02M3/04 ; H01F27/28 ; H01F27/29 ; H01F38/00 ; H03F3/19 ; H03F3/21 ; H03F3/68 ; H03F3/193 ; H04B1/44 ; H01F19/04 ; H03F1/02 ; H03F3/45

Abstract:
A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.
Public/Granted literature
- US20140087672A1 CMOS Based RF Antenna Switch Public/Granted day:2014-03-27
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