发明授权
- 专利标题: Film deposition apparatus
- 专利标题(中): 膜沉积装置
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申请号: US12620750申请日: 2009-11-18
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公开(公告)号: US09297072B2公开(公告)日: 2016-03-29
- 发明人: Hitoshi Kato , Manabu Honma
- 申请人: Hitoshi Kato , Manabu Honma
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: IPUSA, PLLC
- 优先权: JP2008-306734 20081201; JP2008-309011 20081203
- 主分类号: C23C16/455
- IPC分类号: C23C16/455 ; H01L21/677 ; H01L21/67 ; C23C16/40
摘要:
A film deposition apparatus includes a rotary table having a substrate placement area to support a substrate, a vacuum container including a container and a top panel, an open-and-close mechanism configured to open and close the top panel, reactant gas nozzles disposed through and supported by an outer wall of the container to be situated at different angular positions with respect to a rotation center of the rotary table to face areas in which the substrate placement area passes, the reactant gas nozzles having gas discharge ports arranged in radial directions to supply respective reactant gases to the wafer thereby to form respective process areas, a discharge gas supply unit situated at an angular position between the process areas to supply purge gas to form an isolation area that isolates atmospheres of the process areas from each other, and an exhaustion unit configured to exhaust atmosphere inside the vacuum container.
公开/授权文献
- US20100132614A1 FILM DEPOSITION APPARATUS 公开/授权日:2010-06-03