Invention Grant
- Patent Title: Method for repairing an oxide layer and method for manufacturing a semiconductor structure applying the same
- Patent Title (中): 氧化层修复方法及其制造方法
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Application No.: US14444131Application Date: 2014-07-28
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Publication No.: US09299600B2Publication Date: 2016-03-29
- Inventor: Po-Cheng Huang , Yu-Ting Li , Chih-Hsun Lin , Kun-Ju Li , Wu-Sian Sie , Yi-Liang Liu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/683 ; H01L21/02 ; H01L21/3105 ; H01L21/311
Abstract:
A method for repairing an oxide layer and a method for manufacturing a semiconductor structure applying the same are provided. The method for repairing an oxide layer comprises following steps. First, a carrier having a first area and a second area is provided, wherein a repairing oxide layer is formed on the second area. Then, the carrier is attached to a substrate with an oxide layer to be repaired formed thereon, wherein the carrier and the substrate are attached to each other through the repairing oxide layer and the oxide layer to be repaired. Thereafter, the oxide layer to be repaired is bonded with the repairing oxide layer.
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