Invention Grant
- Patent Title: Semiconductor device and method of making same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14576463Application Date: 2014-12-19
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Publication No.: US09299712B2Publication Date: 2016-03-29
- Inventor: Georg Tempel , Ernst-Otto Andersen , Achim Gratz
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/115 ; H01L21/28 ; H01L49/02 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L29/788 ; H01L21/768 ; H01L23/535
Abstract:
A semiconductor device and method of making a semiconductor device are disclosed. A semiconductor body, a floating gate poly and a source/drain region are provided. A metal interconnect region with a control gate node is provided that capacitively couples to the floating gate poly.
Public/Granted literature
- US20150129950A1 Semiconductor Device and Method of Making Same Public/Granted day:2015-05-14
Information query
IPC分类:
