发明授权
- 专利标题： Methods of manufacturing high electron mobility transistors
- 专利标题（中）： 制造高电子迁移率晶体管的方法
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申请号： US14687488申请日： 2015-04-15
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公开(公告)号： US09299800B2公开(公告)日： 2016-03-29
- 发明人: Hyuk-soon Choi , Jung-hee Lee , Jai-kwang Shin , Jae-joon Oh , Jong-bong Ha , Jong-seob Kim , In-jun Hwang , Ki-ha Hong , Ki-sik Im , Ki-won Kim , Dong-seok Kim
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Gyeonggi-do KR Sangyeok-Dong
- 专利权人： Samsun Electronics Co., Ltd.,Kyungpook National University Industry-Academic Cooperation
- 当前专利权人： Samsun Electronics Co., Ltd.,Kyungpook National University Industry-Academic Cooperation
- 当前专利权人地址： KR Gyeonggi-do KR Sangyeok-Dong
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2010-0097417 20101006
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/762 ; H01L29/08 ; H01L29/20 ; H01L29/423 ; H01L29/778 ; H01L21/02 ; H01L29/201 ; H01L29/205 ; H01L29/207
摘要：
The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.
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