Invention Grant
US09305656B2 Methods applying a non-zero voltage differential across a memory cell not involved in an access operation
有权
在不参与访问操作的存储器单元上应用非零电压差分的方法
- Patent Title: Methods applying a non-zero voltage differential across a memory cell not involved in an access operation
- Patent Title (中): 在不参与访问操作的存储器单元上应用非零电压差分的方法
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Application No.: US14625186Application Date: 2015-02-18
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Publication No.: US09305656B2Publication Date: 2016-04-05
- Inventor: Toru Tanzawa
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/24 ; G11C11/56 ; G11C16/10 ; G11C16/06 ; G11C16/34
Abstract:
Methods applying a non-zero voltage differential across a memory cell not involved in an access operation can facilitate improved data retention characteristics.
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