Invention Grant
- Patent Title: Semiconductor contacts and methods of fabrication
- Patent Title (中): 半导体触点和制造方法
-
Application No.: US14318901Application Date: 2014-06-30
-
Publication No.: US09305785B2Publication Date: 2016-04-05
- Inventor: Andy Chih-Hung Wei , Guillaume Bouche , Gabriel Padron Wells , Xiang Hu
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/28 ; H01L29/06 ; H01L23/535 ; H01L21/762 ; H01L29/66 ; H01L27/12 ; H01L21/84 ; H01L29/78
Abstract:
Embodiments of the present invention provide an improved structure and method of contact formation. A cap nitride is removed from a gate in a region that is distanced from a fin. This facilitates reduced process steps, allowing the gate and the source/drain regions to be opened in the same process step. Extreme Ultraviolet Lithography (EUVL) may be used to pattern the resist to form the contacts.
Public/Granted literature
- US20150380250A1 SEMICONDUCTOR CONTACTS AND METHODS OF FABRICATION Public/Granted day:2015-12-31
Information query
IPC分类:
