Invention Grant
- Patent Title: Methods for atomic layer etching
- Patent Title (中): 原子层蚀刻方法
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Application No.: US14601611Application Date: 2015-01-21
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Publication No.: US09305805B2Publication Date: 2016-04-05
- Inventor: Mei Chang , Joseph Yudovsky
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3065 ; H01L21/677 ; H01L21/67 ; H01J37/32
Abstract:
Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element and remote plasma are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.
Public/Granted literature
- US20150132961A1 Methods For Atomic Layer Etching Public/Granted day:2015-05-14
Information query
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