Invention Grant
- Patent Title: Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip
- Patent Title (中): 光电半导体芯片及其制造方法
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Application No.: US14526713Application Date: 2014-10-29
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Publication No.: US09306131B2Publication Date: 2016-04-05
- Inventor: Nikolaus Gmeinwieser , Berthold Hahn
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102009023351 20090529
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/00 ; H01L33/50 ; H01L33/08 ; H01L33/24 ; H01L33/06 ; H01L33/32 ; H01L33/22

Abstract:
An optoelectronic semiconductor chip having a semiconductor layer sequence includes at least one active layer that generates primary radiation; a plurality of conversion layers that at least partially absorb the primary radiation and convert the primary radiation into secondary radiation of a longer wavelength than the primary radiation; and a roughened portion that extends at least into one of the conversion layers, wherein the roughened portion has a random structure, the semiconductor layer sequence is arranged on a carrier, a top side of the semiconductor layer sequence facing away from the carrier is formed by the roughened portion, the at least one active layer is located between the carrier and the conversion layers, and the roughened portion includes a plurality of recesses free of a semiconductor material.
Public/Granted literature
- US20150053919A1 OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP Public/Granted day:2015-02-26
Information query
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