Invention Grant
- Patent Title: Method and system for providing a bulk perpendicular magnetic anisotropy free layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications
- Patent Title (中): 用于在旋转传递转矩磁随机存取存储器应用中的垂直磁结中提供体积垂直磁各向异性自由层的方法和系统
-
Application No.: US14171574Application Date: 2014-02-03
-
Publication No.: US09306155B2Publication Date: 2016-04-05
- Inventor: Xueti Tang , Jang Eun Lee
- Applicant: Samsung Electronics Co., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Convergent Law Group LLP
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/10 ; H01L43/12 ; H01L43/08
Abstract:
A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer includes at least one of a hybrid perpendicular magnetic anisotropy (PMA) structure and tetragonal bulk perpendicular magnetic anisotropy (B-PMA) structure. At least one of the free layer and the pinned layer have a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Public/Granted literature
Information query
IPC分类:
