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公开(公告)号：US20210159402A1
公开(公告)日：2021-05-27
申请号：US16800779
申请日：2020-02-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ikhtiar , Jaewoo Jeong , Mohamad Towfik Krounbi , Xueti Tang
Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction includes a free layer and an oxide interlayer on the free layer. The oxide interlayer includes at least one glass-forming agent. In some aspects, the magnetic junction includes a reference layer and a nonmagnetic spacer layer being between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the oxide interlayer.
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公开(公告)号：US11009570B2
公开(公告)日：2021-05-18
申请号：US16194248
申请日：2018-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ikhtiar , Xueti Tang , Mohamad Krounbi
Abstract: A magnetic tunnel junction stack includes: a pinned layer; a main oxide barrier layer on the pinned layer; a free layer on the main oxide barrier layer; and a hybrid oxide/metal cap layer on the free layer. The hybrid oxide/metal cap layer includes: a first oxide layer on the free layer; a second oxide layer on the first oxide layer; and a metallic cap layer on the second oxide layer, wherein the free layer is free of boron (B).
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公开(公告)号：US10553642B2
公开(公告)日：2020-02-04
申请号：US15787524
申请日：2017-10-18
Applicant: Samsung Electronics Co., LTD.
Inventor： Don Koun Lee , Mohamad Towfik Krounbi , Xueti Tang , Gen Feng , Ikhtiar
Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a M-containing oxide layer adjacent to the free layer. M includes at least one of Ti, Al, Hf, Zr, Mo, V and Nb. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the M-containing oxide layer.
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4.发明申请公开(公告)号：US20180351086A1
公开(公告)日：2018-12-06
申请号：US15659605
申请日：2017-07-25
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Gen Feng , Mohamad Towfik Krounbi
Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, an oxide layer and at least one oxygen blocking layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the pinned layer and the free layer. The oxide layer is adjacent to the free layer. The free layer is between the nonmagnetic spacer layer and the oxide layer. The oxygen blocking layer(s) has a position selected from adjacent to the oxide layer and adjacent to the pinned layer. In some aspects, the magnetic junction may also include an oxygen adsorber layer and/or a tuning layer.
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公开(公告)号：US09941467B1
公开(公告)日：2018-04-10
申请号：US15364147
申请日：2016-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Xueti Tang , Mohamad Towfik Krounbi , Donkoun Lee , Gen Feng
CPC classification number: H01L43/08 , G11C11/161 , H01L27/20 , H01L27/22 , H01L27/228 , H01L41/00 , H01L43/10 , H01L43/12
Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes a [CoxFeyBz]uMot layer, where u+t=1, x+y+z=1 and u, t, x, y and z are each nonzero. The [CoxFeyBz]uMot layer has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.
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Patent Agency Ranking
6.发明授权Method and system for providing rare earth magnetic junctions usable in spin transfer torque magnetic random access memory applications 有权提供可用于旋转转矩磁性随机存取存储器应用中的稀土磁结的方法和系统公开(公告)号：US09508924B2
公开(公告)日：2016-11-29
申请号：US14731267
申请日：2015-06-04
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Jangeun Lee
CPC classification number: H01L43/10 , G11C11/161 , G11C11/1675 , H01L43/08 , H01L43/12
Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free and pinned layers each has a layer perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. At least one of the pinned layer and the free layer includes a multilayer. The multilayer includes at least one bilayer. Each of the bilayer(s) has a first layer and a second layer. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes an amorphous magnetic layer. The multilayer has a nonzero perpendicular magnetic anisotropy up to at least four hundred degrees Celsius.
Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 自由和被钉扎的层各自具有大于面外去磁能的垂直磁各向异性能的层。 钉扎层和自由层中的至少一个包括多层。 多层包括至少一个双层。 每个双层具有第一层和第二层。 第一层包括磁性过渡金属和稀土的合金。 第二层包括非晶磁性层。 多层具有至多四百摄氏度的非零垂直磁各向异性。
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7.发明授权Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements 有权通过覆盖层诱导垂直各向异性和使用这种磁性元件的存储器来提供具有改进性能的磁性隧道接合元件的方法和系统公开(公告)号：US09412787B2
公开(公告)日：2016-08-09
申请号：US14176310
申请日：2014-02-10
Applicant: Samsung Electronics Co., LTD.
Inventor： Steven M. Watts , Zhitao Diao , Xueti Tang
IPC: H01L27/22 , B82Y25/00 , B82Y40/00 , G01R33/09 , G11C11/16 , H01F10/32 , H01F41/30 , H01L43/08 , H01L43/12 , H01F41/34
CPC classification number: H01L27/224 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , G11C11/161 , G11C11/1675 , G11C11/5607 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01F41/34 , H01L27/228 , H01L43/08 , H01L43/12
Abstract: A magnetic element and a magnetic memory utilizing the magnetic element are described. A contact is electrically coupled to the magnetic element. The magnetic element includes pinned, nonmagnetic spacer, and free layers and a perpendicular capping layer adjoining the free layer and the contact. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy. The free layer is switchable between magnetic states when a write current is passed through the magnetic element. The free layer includes ferromagnetic layers interleaved with capping layer(s) such that a ferromagnetic layer resides at an edge of the free layer. The capping layer(s) are configured such that the ferromagnetic layers are ferromagnetically coupled.
Abstract translation: 描述了利用磁性元件的磁性元件和磁性存储器。 触点电耦合到磁性元件。 磁性元件包括固定的，非磁性的间隔物，以及与自由层和触点相邻的自由层和垂直的覆盖层。 自由层具有对应于小于面外去磁能的垂直各向异性能的平面退磁能和垂直磁各向异性。 非磁性间隔层位于被钉扎层和自由层之间。 垂直覆盖层引起至少部分垂直磁各向异性。 当写入电流通过磁性元件时，自由层可以在磁状态之间切换。 自由层包括与封盖层交错的铁磁层，使得铁磁层位于自由层的边缘。 覆盖层被构造成使得铁磁层被铁磁耦合。
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8.发明申请METHOD AND SYSTEM FOR PROVIDING RARE EARTH MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS 有权用于提供转子转子磁性随机存取存储器应用中可用的稀土地磁接点的方法和系统公开(公告)号：US20160005956A1
公开(公告)日：2016-01-07
申请号：US14731267
申请日：2015-06-04
Applicant: Samsung Electronics Co., LTD.
Inventor： Xueti Tang , Jangeun Lee
CPC classification number: H01L43/10 , G11C11/161 , G11C11/1675 , H01L43/08 , H01L43/12
Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free and pinned layers each has a layer perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. At least one of the pinned layer and the free layer includes a multilayer. The multilayer includes at least one bilayer. Each of the bilayer(s) has a first layer and a second layer. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes an amorphous magnetic layer. The multilayer has a nonzero perpendicular magnetic anisotropy up to at least four hundred degrees Celsius.
Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 自由和被钉扎的层各自具有大于面外去磁能的垂直磁各向异性能的层。 钉扎层和自由层中的至少一个包括多层。 多层包括至少一个双层。 每个双层具有第一层和第二层。 第一层包括磁性过渡金属和稀土的合金。 第二层包括非晶磁性层。 多层具有至多四百摄氏度的非零垂直磁各向异性。
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公开(公告)号：US10431275B2
公开(公告)日：2019-10-01
申请号：US15979311
申请日：2018-05-14
Applicant: Samsung Electronics Co., LTD.
Inventor： Hong-Sik Jung , Xueti Tang
Abstract: A magnetic apparatus, a memory using the magnetic apparatus and method for providing the magnetic apparatus are described. The magnetic apparatus includes a magnetic junction and a hybrid capping layer adjacent to the magnetic junction. The hybrid capping layer includes an insulating layer, a discontinuous oxide layer, and a noble metal layer. The discontinuous oxide layer is between the insulating layer and the noble metal layer. The insulating layer is between the magnetic junction and the noble metal layer. In one aspect, the magnetic junction includes a reference layer, a nonmagnetic spacer layer that may be a tunneling barrier layer and a free layer.
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10.发明申请公开(公告)号：US20190272863A1
公开(公告)日：2019-09-05
申请号：US15979311
申请日：2018-05-14
Applicant: Samsung Electronics Co., LTD.
Inventor： Hong-Sik Jung , Xueti Tang
Abstract: A magnetic apparatus, a memory using the magnetic apparatus and method for providing the magnetic apparatus are described. The magnetic apparatus includes a magnetic junction and a hybrid capping layer adjacent to the magnetic junction. The hybrid capping layer includes an insulating layer, a discontinuous oxide layer, and a noble metal layer. The discontinuous oxide layer is between the insulating layer and the noble metal layer. The insulating layer is between the magnetic junction and the noble metal layer. In one aspect, the magnetic junction includes a reference layer, a nonmagnetic spacer layer that may be a tunneling barrier layer and a free layer.
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