Invention Grant
US09306565B2 Nonvolatile memory with chip-select/device-address triggered on-die termination
有权
具有芯片选择/器件地址的非易失性存储器触发片上端接
- Patent Title: Nonvolatile memory with chip-select/device-address triggered on-die termination
- Patent Title (中): 具有芯片选择/器件地址的非易失性存储器触发片上端接
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Application No.: US14711538Application Date: 2015-05-13
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Publication No.: US09306565B2Publication Date: 2016-04-05
- Inventor: Kyung Suk Oh , Ian P. Shaeffer
- Applicant: Rambus Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Charles Shemwell
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K19/00 ; G06F13/40 ; G11C11/4093 ; H03K19/0175 ; G11C11/401 ; G11C11/419 ; G11C16/26 ; G11C11/41 ; G11C11/4063 ; G11C11/413 ; G11C11/417 ; G11C16/06 ; G11C16/32

Abstract:
A non-volatile memory device determines, based at least partly on a first multi-bit device address received via a signaling interface and an incoming chip-select signal, whether the device is to participate in a memory access transaction by receiving or outputting data via an I/O node of the signaling interface. Based at least in part on that determination, on-die termination circuitry within the non-volatile memory device switchably couples or decouples a termination resistance between the I/O node and a supply voltage node during a data transmission phase of the memory access transaction.
Public/Granted literature
- US20150244364A1 NONVOLATILE MEMORY WITH CHIP-SELECT/DEVICE-ADDRESS TRIGGERED ON-DIE TERMINATION Public/Granted day:2015-08-27
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