Invention Grant
US09316916B2 Method to mitigate resist pattern critical dimension variation in a double-exposure process
有权
减轻双曝光过程中抗蚀剂图案临界尺寸变化的方法
- Patent Title: Method to mitigate resist pattern critical dimension variation in a double-exposure process
- Patent Title (中): 减轻双曝光过程中抗蚀剂图案临界尺寸变化的方法
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Application No.: US12419403Application Date: 2009-04-07
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Publication No.: US09316916B2Publication Date: 2016-04-19
- Inventor: Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
- Applicant: Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNRIES INC.
- Current Assignee: GLOBALFOUNRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Catherine Ivers
- Main IPC: G03F7/207
- IPC: G03F7/207 ; G03F7/40 ; G03F7/00 ; G03F7/20 ; G03F7/38
Abstract:
A method to mitigate resist pattern critical dimension (CD) variation in a double-exposure process generally includes forming a photoresist layer over a substrate; exposing the photoresist layer to a first radiation; developing the photoresist layer to form a first pattern in the photoresist layer; forming a topcoat layer over the photoresist layer; exposing the topcoat layer and the photoresist layer to a second radiation; removing the topcoat layer; and developing the photoresist layer to form a second pattern in the photoresist layer.
Public/Granted literature
- US20100255428A1 METHOD TO MITIGATE RESIST PATTERN CRITICAL DIMENSION VARIATION IN A DOUBLE-EXPOSURE PROCESS Public/Granted day:2010-10-07
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