发明授权
- 专利标题： Semiconductor device and manufacturing method of the same
- 专利标题（中）： 半导体器件及其制造方法相同
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申请号： US13216413申请日： 2011-08-24
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公开(公告)号： US09324826B2公开(公告)日： 2016-04-26
- 发明人: Tatsuo Shimizu , Takashi Shinohe
- 申请人： Tatsuo Shimizu , Takashi Shinohe
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P
- 优先权： JP2011-023599 20110207
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66 ; H01L29/739 ; H01L29/78 ; H01L21/04 ; H01L29/16 ; H01L29/51
摘要：
A semiconductor device of an embodiment at least includes: a SiC substrate; and a gate insulating film formed on the SiC substrate, wherein at an interface between the SiC substrate and the gate insulating film, some of elements of both of or one of Si and C in an outermost surface of the SiC substrate are replaced with at least one type of element selected from nitrogen, phosphorus, and arsenic.
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